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Initial Stages of Growth of the GaN(11\(\bar {2}\)2) Layer on a Nano-structured Si(113) Substrate

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Abstract

scanning electron microscopy was used to study of the initial stages of the formation of a semipolar GaN(11\(\bar {2}\)2) layer during Metalorganic Chemical Vapor Deposition on Si(113) substrates, on the surface of which U-shaped grooves with element sizes <100 nm (NP-Si(113)) were formed. It was found that NP-Si(113) substrates with a buffer AlN layer stimulate the formation of islands faceted by the planes m-GaN, c‑GaN. It is shown that there is a predominant growth of the m-GaN facet in comparison with c-GaN. The experimental results correspond to the Gibbs-Curie-Wolff selection principle, but taking into account elastic stresses in the c-GaN plane.

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ACKNOWLEDGMENTS

The authors would like to thank V.K. Smirnov for providing the substrates NP-Si(113) and M.P. Shcheglov for X‑ray structural measurements.

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  1. Ioffe Institute, 194021, St. Petersburg, Russia

    V. N. Bessolov, E. V. Konenkova & S. N. Rodin

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  1. V. N. Bessolov
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  2. E. V. Konenkova
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  3. S. N. Rodin
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Correspondence to E. V. Konenkova.

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Bessolov, V.N., Konenkova, E.V. & Rodin, S.N. Initial Stages of Growth of the GaN(11\(\bar {2}\)2) Layer on a Nano-structured Si(113) Substrate. Semiconductors 57, 149–152 (2023). https://doi.org/10.1134/S1063782623060040

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