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Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb1–xSnxTe with x ≥ 0.4

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Abstract

We have optimized the growth conditions of the buffer layer for further deposition of Pb1–xSnxTe (x ≥ 0.4), which has the properties of a crystalline topological insulator. To this end, a three-component heterostructure consisting of CaF2, BaF2, and Pb0.7Sn0.3Te:In layers was formed and optimized on the Si(111) surface. The surface morphology of this structure was studied depending on the temperature growth regimes and the optimal combination of growth parameters was selected from the point of view of smoothness and crystalline quality.

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Funding

The study was supported by the Russian Foundation for Basic Research grant no. 21-52-12024 NNIO_a.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. K. Kaveev

  2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    O. E. Tereshchenko

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  1. A. K. Kaveev
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  2. O. E. Tereshchenko
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Correspondence to A. K. Kaveev.

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Kaveev, A.K., Tereshchenko, O.E. Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb1–xSnxTe with x ≥ 0.4. Semiconductors 57, 235–238 (2023). https://doi.org/10.1134/S1063782623070114

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  • DOI: https://doi.org/10.1134/S1063782623070114

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