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The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates

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Abstract

Effect of the pump power on the photoluminescence intensity for dislocation-related luminescence centers is studied in p-type silicon containing oxygen precipitates. Oxygen precipitates are induced as a result of three-stage annealing used for formation of a getter for fast diffusing impurities in microelectronics technology while D1 and D2 dislocation-related luminescence centers were produced during subsequent annealing in a flow of argon at 1000°C. The photoluminescence excitation efficiencies for the D1 and D2 lines were measured at a temperature of liquid helium.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    N. A. Sobolev, A. E. Kalyadin, K. F. Shtel’makh, E. I. Shek, V. I. Sakharov & I. T. Serenkov

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  1. N. A. Sobolev
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  2. A. E. Kalyadin
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  3. K. F. Shtel’makh
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  4. E. I. Shek
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  5. V. I. Sakharov
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  6. I. T. Serenkov
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Correspondence to N. A. Sobolev.

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Sobolev, N.A., Kalyadin, A.E., Shtel’makh, K.F. et al. The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates. Semiconductors 57, 268–271 (2023). https://doi.org/10.1134/S1063782623070187

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  • DOI: https://doi.org/10.1134/S1063782623070187

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