Abstract
Investigation and development of the post-growth technology for fabricating multi-junction photovoltaic converters based on GaInP/GaInAs/Ge heterostructure has been carried out. Antireflection coating, ohmic contacts and mesa- structure forming stages have been reviewed. The technology of n+-GaAs contact layer etching with the help of plasma-chemical, liquid and ion-beam etching has been investigated. Antireflection coefficient of radiation from the heterostructure with TiOx/SiO2 (x close to 2) antireflection coating surface was less then 3% in wavelength range 450–850 nm. The value of contact resistance for n- and p-type conductivity was 3 × 10–5–3 × 10–6 Ω cm2, the decrease of photosensitive region shading degree at increased bus-bar conductivity has been archived. The mesa-structure surface current leakage decreased to the value of 10–9 A at voltage less then 1 V.
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Malevskaya, A.V., Il’inskaya, N.D., Zadiranov, Y.M. et al. Post-Growth Technology of Multi-Junction Photovoltaic Converters Based on A3B5 Heterostructures. Tech. Phys. 68, 492–496 (2023). https://doi.org/10.1134/S1063784223900863
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DOI: https://doi.org/10.1134/S1063784223900863