Abstract
We present the results of terahertz generation studies under excitation via femtosecond lasers pulses epitaxial films of InAs, which were synthesized on semi-insulating and highly doped GaAs substrates. It is shown that a terahertz emitter based on epitaxial InAs film grown on a heavily doped GaAs n-type substrate, has the same terahertz generation efficiency as the InAs-film emitter grown on a semi-isolating GaAs substrate, but it has a significantly better spectral resolution, which is mainly determined by the parameters of the optical delay line and the femtosecond laser’s stability.
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Funding
This study was performed with financial support from the Ministry of Science and Higher Education of the Russian Federation granted as part of agreement No. 075-15-2021-998 dated September 23, 2021.
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Trukhin, V.N., Solov’ev, V.A., Mustafin, I.A. et al. Terahertz Generation in InAs Epitaxial Films. Tech. Phys. Lett. 49 (Suppl 2), S146–S149 (2023). https://doi.org/10.1134/S1063785023900595
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DOI: https://doi.org/10.1134/S1063785023900595