Abstract
The design of the heterostructure of a 2.5 THz range quantum-cascade detector is proposed and heterostructure is grown by molecular-beam epitaxy technique. To optimize the thicknesses of the layers of the heterostructure cascades, a numerical method for iterative solution of the Schrödinger–Poisson equation in the kp formalism was used. The grown heterostructure of the quantum-cascade detector showed a high structural perfection, confirmed by the small values of the average FWHM of the high-order satellite peaks on the X-ray diffraction rocking curves, which were (8.3 ± 0. 5)n. Analysis of dark-field images obtained by transmission electron microscopy showed that the total thickness of the layers in the cascade is 137.3 ± 6.9 nm, which corresponds to the calculated thickness of the layers in the cascade of the heterostructure of the quantum-cascade detector.
REFERENCES
L. Consolino, S. Bartalini, H. Beere, D. Ritchie, M. Vitiello, P. De Natale. Sensors, 13 (3), 3331 (2013).
G.-R. Kim, T. -I. Jeon, D. Grischkowsky. Opt. Express, 25 (21), 25422 (2017).
M. Locatelli, M. Ravaro, S. Bartalini, L. Consolino, M. S. Vitiello, R. Cicchi, F. Pavone, P. De Natale. Sci. Rep., 5 (1), 13566 (2015).
N. Rothbart, O. Holz, R. Koczulla, K. Schmalz, H.‑W. Hubers. Sensors, 19 (12), 2719 (2019).
P. U. Jepsen, D. G. Cooke, M. Koch. Laser Photon. Rev., 5 (1), 124 (2010).
A. Khalatpour, A. K. Paulsen, C. Deimert, Z. R. Wasilewski, Q. Hu. Nature Photonics, 15 (1), 16 (2020).
A. Vardi, N. Kheiro din, L. Nevou, H. Machhadani, L. Vivien, P. Crozat, M. Tchernycheva, R. Colombelli, F. H. Julien, F. Guillot, C. Bougerol, E. Monroy, S. Schacham, G. Bahir. Appl. Phys. Lett., 93 (19), 193509 (2008).
M. Hakl, Q. Lin, S. Lepillet, M. Billet, J.-F. Lampin, S. Pirotta, R. Colombelli, W. Wan, J. C. Cao, H. Li, E. Peytavit, S. Barbieri. ACS Photonics, 8 (2), 464 (2021).
D. Palaferri, Y. Todorov, Y.N. Chen, J. Madeo, A. Vasanelli, L.H. Li, A.G. Davies, E. H. Linfield, C. Sirtori. Appl. Phys. Lett., 106 (16), 161102 (2015).
H. Li, W.-J. Wan, Z.-Y. Tan, Z.-L. Fu, H.-X. Wang, T. Zhou, Z.-P. Li, C. Wang, X.-G. Guo, J.-C. Cao. Sci. Rep., 7 (1), 3452 (2017).
B. Paulillo, S. Pirotta, H. Nong, P. Crozat, S. Guilet, G. Xu, S. Dhillon, L. H. Li, A. G. Davies, E. H. Linfield, R. Colombelli. Optica, 4 (12), 1451 (2017).
P. Micheletti, J. Faist, T. Olariu, U. Senica, M. Beck, G. Scalari. APL Phot. Optica, 6, 106102 (2021).
M. Graf, G. Scalari, D. Hofstetter, J. Faist, H. Beere, E. Linfield, D. Ritchie, G. Davies. Appl. Phys. Lett., 84 (4), 475 (2004).
J. Popp, M. Haider, M. Franckie, J. Faist, C. Jirauschek. In: 2020 Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD) (Turin, Italy, 2020). https://doi.org/10.1109/NUSOD49422.2020.9217784
J. Popp, M. Haider, M. Franckie, J. Faist, C. Jirauschek. In: 2020 XXXIIIrd General Assembly and Scientific Symposium of the Int. Union of Radio Science (Rome, Italy, 2020). https://doi.org/10.23919/URSIGASS49373.2020.9232167
J. Popp, M. Haider, M. Franckie, J. Faist, C. Jirauschek. Opt. Quant. Electron., 53 (6), 287 (2021).
link: https://www.nextnano.de/. Accepted date: 21.09.2021.
A. V. Babichev, V. V. Dudelev, A. G. Gladyshev, D. A. Mikhailov, A. S. Kurochkin, E. S. Kolodeznyi, V. E. Bougrov, V. N. Nevedomskiy, L. Y. Karachinsky, I. I. Novikov, D. V. Denisov, A. S. Ionov, S. O. Slipchenko, A. V. Lutetskiy, N. A. Pikhtin, G. S. Sokolovskii, A. Y. Egorov. Techn. Phys. Lett., 45 (7), 735 (2019).
A. V. Babichev, A. S. Kurochkin, E. C. Kolodeznyi, A. V. Filimonov, A. A. Usikova, V. N. Nevedomsky, A. G. Gladyshev, L. Y. Karachinsky, I. I. Novikov, A. Y. Egorov. Semiconductors, 52 (6), 745 (2018).
A. E. Zhukov, G. E. Cirlin, R. R. Reznik, Y. B. Samsonenko, A. I. Khrebtov, M. A. Kaliteevski, K. A. Ivanov, N. V. Kryzhanovskaya, M. V. Maximov, Z. I. Alferov. Semiconductors, 50 (5), 662 (2016).
G. E. Cirlin, R. R. Reznik, A. E. Zhukov, R. A. Khabibullin, K. V. Maremyanin, V. I. Gavrilenko, S. V. Morozov. Semiconductors, 54 (9), 1092 (2020).
H. E. Beere, J. R. Freeman, O. P. Marshall, C. H. Worrall, D. Ritchie. J. Cryst. Growth, 311 (7), 1923 (2009).
X. Wang, C. Shen, T. Jiang, Z. Zhan, Q. Deng, W. Li, W. Wu, N. Yang, W. Chu, S. Duan. AIP Adv., 6 (7), 075210 (2016).
Funding
The research was supported by a financial grant provided by the Russian Science Foundation (project No. 20-79-10285).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflict of interest.
Additional information
Publisher’s Note.
Pleiades Publishing remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Babichev, A.V., Kolodeznyi, E.S., Gladyshev, A.G. et al. Heterostructure of a 2.5 THz Range Quantum-Cascade Detector. Semiconductors 57, 440–444 (2023). https://doi.org/10.1134/S1063782623050019
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782623050019