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Surface-Emitting Quantum-Cascade Lasers with a Grating Formed by Focused Ion Beam Milling

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Abstract

The results of studies of 7.5–8.0 μm range surface-emitting ring quantum-cascade lasers are presented. A second- order diffraction grating with a calculated coupling coefficient of ~9 cm–1 is formed on the entire surface of the ring cavity by focused ion beam milling. Surface-emitting lasing at room temperature near 7.75 μm with a threshold current density of ~8 kA/cm2 and an outer radius of the ring cavity of 202 μm is demonstrated. The results of studying the intensity distribution in the far-field near the normal to the surface showed the presence of two maxima. It is shown that the implemented coupling coefficient is not sufficient to ensure single-mode lasing in the studied ring quantum-cascade lasers.

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Funding

This study was supported financially by a grant from the Russian Science Foundation (project no. 20-79-10285).

Author information

Authors and Affiliations

  1. ITMO University, 197101, St. Petersburg, Russia

    A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, L. Ya. Karachinsky & I. I. Novikov

  2. Ioffe Institute, 194021, St. Petersburg, Russia

    D. A. Mikhailov, G. V. Voznyuk, M. I. Mitrofanov, S. O. Slipchenko, A. V. Lyutetskii, V. V. Dudelev, V. P. Evtikhiev, G. S. Sokolovskii & N. A. Pikhtin

  3. Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    M. I. Mitrofanov

  4. St. Petersburg State Electrotechnical University “LETI”, 197022, St. Petersburg, Russia

    D. V. Denisov

  5. Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. Yu. Egorov

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  1. A. V. Babichev
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Correspondence to A. V. Babichev.

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Babichev, A.V., Mikhailov, D.A., Kolodeznyi, E.S. et al. Surface-Emitting Quantum-Cascade Lasers with a Grating Formed by Focused Ion Beam Milling. Semiconductors 57, 445–450 (2023). https://doi.org/10.1134/S1063782623090038

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