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Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

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Abstract

The article investigates the effect of rapid thermal annealing of ternary GaAs1–xNx/GaAs solid solutions on the distribution of nitrogen atoms in the crystal lattice. The samples are studied by photoluminescence spectroscopy and high-resolution X-ray diffractometry. Due to the size and electronegativity mismatch of nitrogen and arsenic atoms, nitrogen is incorporated unevenly into the GaAs crystal lattice. Options of the nitrogen atoms arrangement in the GaAs crystal lattice before and after rapid thermal annealing are shown.

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Funding

The study is supported by Ministry of Science and Education of the Russian Federation (FSRM-2020-0008).

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Authors and Affiliations

  1. Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. A. Lazarenko, K. Yu. Shubina, E. V. Nikitina, E. V. Pirogov, A. M. Mizerov & M. S. Sobolev

  2. Ioffe Institute, 194021, St. Petersburg, Russia

    E. V. Nikitina

Authors
  1. A. A. Lazarenko
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  2. K. Yu. Shubina
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  3. E. V. Nikitina
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  4. E. V. Pirogov
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  5. A. M. Mizerov
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  6. M. S. Sobolev
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Correspondence to E. V. Pirogov.

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Lazarenko, A.A., Shubina, K.Y., Nikitina, E.V. et al. Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs. Semiconductors 57, 550–553 (2023). https://doi.org/10.1134/S1063782623090105

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  • DOI: https://doi.org/10.1134/S1063782623090105

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