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Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells

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Abstract

The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 1014–1 × 1015 cm–2 has been studied. Studies have shown that the smallest degradation of the “saturation” currents of the diffusion current flow mechanism from J0d ≤ 5 × 10–13 to J0d ≤ 3 × 10–12 A/cm2 and efficiency from 19.2 to 13.6% (AM0, 1367 W/m2) were n-α-Si:H/c-p(Ga)/p-α-Si:H and n-c-Si:H/c-p(Ga)/p-α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, Russia

    V. S. Kalinovskii, E. I. Terukov, K. K. Prudchenko, E. V. Kontrosh & I. A. Tolkachev

  2. R&D Center of Thin Film Technologies in Energetics under the Ioffe Institute LLC, St. Petersburg, Russia

    E. I. Terukov, A. A. Bazeley & A. A. Titov

Authors
  1. V. S. Kalinovskii
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  2. E. I. Terukov
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  3. K. K. Prudchenko
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  4. A. A. Bazeley
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  5. E. V. Kontrosh
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  6. I. A. Tolkachev
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  7. A. A. Titov
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Correspondence to K. K. Prudchenko.

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Kalinovskii, V.S., Terukov, E.I., Prudchenko, K.K. et al. Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells. Tech. Phys. Lett. 49 (Suppl 3), S200–S203 (2023). https://doi.org/10.1134/S1063785023900741

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  • DOI: https://doi.org/10.1134/S1063785023900741

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