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The Temperature Distribution Simulation in the Graphene Sublimation Growth Zone on SiC Substrate

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Abstract

The simulation results of the temperature distribution in the growth area of graphene layers obtained by the method of thermal decomposition of the silicon carbide surface substrates in setup with induction heating are presented. The heating parameters of the setup elements are calculated using the commercial package COMSOL Multiphysics taking into account the electrical, thermal and magnetic properties of the materials from which the growth plant elements are made. A numerical estimate of the heating inhomogeneity of silicon carbide plates over its area during the growth of graphene layers at a given temperature is given. It is shown that the lateral temperature distribution over the area of the plate has radial symmetry with decreasing values towards the center.

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ACKNOWLEDGMENTS

The work was partially supported by the Ministry of Science and Higher Education of the Russian Federation (agreement no. 075-15-2021-1349).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    S. P. Lebedev, S. Iu. Priobrazhenskii, A. V. Plotnikov, M. G. Mynbaeva & A. A. Lebedev

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  1. S. P. Lebedev
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  2. S. Iu. Priobrazhenskii
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  3. A. V. Plotnikov
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  4. M. G. Mynbaeva
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  5. A. A. Lebedev
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Correspondence to S. P. Lebedev.

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Lebedev, S.P., Priobrazhenskii, S.I., Plotnikov, A.V. et al. The Temperature Distribution Simulation in the Graphene Sublimation Growth Zone on SiC Substrate. Tech. Phys. 68, 648–652 (2023). https://doi.org/10.1134/S1063784223080169

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