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Study of thermal effects in silicon-based PIN detectors with different external bias voltages irradiated by 1064 nm continuous laser

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Abstract

In this work, we examined the damage area and maximum surface temperature of silicon-based photodiodes (PIN) with varying external bias voltages under continuous laser irradiation at 1064 nm. The temperature at the silicon-based PIN detector's top surface center point is observed to steadily drop as the external bias voltage rises, and the extent of damage is also decreasing as the external bias voltage rises. Using COMSOL Multiphysics, a finite element simulation program, we ran a 2D numerical simulation of this process in order to better understand the mechanism underlying this phenomena. This is due to the fact that the produced thermons at 0 V bias voltage are mostly dependent on the detector surface, and when the bias voltage increases, the carrier's velocity of motion is accelerated and its heat accumulation is decreased, which lowers the detector temperature.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work is supported financially by the Science and Technology Development Program of Jilin Province (YDZJ202201ZYTS296) .

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Authors and Affiliations

  1. Jilin Key Laboratory of Solid-State Laser Technology and Application, School of Science, Changchun University of Science and Technology, Changchun, 130022, China

    Zhi Wei, Jinyuan Yu, Le Gao, Minghui Zuo & Pin Nie

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  1. Zhi Wei
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  2. Jinyuan Yu
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  3. Le Gao
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  4. Minghui Zuo
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  5. Pin Nie
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Contributions

Z.W. conceptualized, investigated, project managed and wrote the text of the manuscript for this article, J.Y. primarily performed data analysis, experiments, software use, plotting and review of the manuscript, L.G. performed experimental validation and software use, M.Z. and P.N. assisted with experiments and review of the manuscript, and all authors reviewed the manuscript.

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Correspondence to Zhi Wei.

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Wei, Z., Yu, J., Gao, L. et al. Study of thermal effects in silicon-based PIN detectors with different external bias voltages irradiated by 1064 nm continuous laser. Appl. Phys. B 130, 58 (2024). https://doi.org/10.1007/s00340-024-08201-4

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