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Fabrication and Characterization of the Heterojunction Diode from Ternary Ni1-xCoxO Thin Films on n-Si Substrates by Sol-Gel Method

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Abstract

A simple yet effective method for fabricating heterojunction diodes is presented in this study. It involves the deposition of Ni1-xCoxO thin films on n-Si substrates, taken in the stoichiometric ratio. Experiments have been carried out to investigate the electrical behavior of the diodes by varying the mixing ratios of CoO and NiO. The effect of the various stoichiometric ratio of CoO and NiO on the optical and electrical properties of the films was analyzed using UV-vis absorption spectra and two-probe resistivity measurements. The electrical properties of Ag/Ni1-xCoxO/n-Si diodes were found to be significantly affected by changes in the concentration of cobalt oxide and nickel oxide. All diodes exhibited rectification behavior as evidenced by their dark I-V characteristics. Important junction parameters such as the series resistance (Rs), the rectification ratio (RR), the ideality factor (n), and the barrier height (ΦB) were calculated by analyzing the I-V data. In addition, the capacitance-voltage (C-V) characteristics were measured over a frequency range from 10 kHz to 1 MHz. Our results show that the electrical properties of the Ag/Ni1-xCoxO/n-Si diodes can be tuned by varying the concentration ratios of cobalt oxide and nickel oxide.

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Funding

Batman University Commission of Scientific Research Project under Grant No. BTUBAP-2019-SHMYO-01 provided support for this study.

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Authors and Affiliations

  1. Department of Physics, Graduate School of Education, Batman University, Batman, Turkey

    Mehmet Ozgur

  2. Department of Opticianry Program, Vocational School of Health Services, Batman University, Batman, Turkey

    Serif Ruzgar

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  1. Mehmet Ozgur
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The author contributions to this article are as follows: Mehmet Ozgur, thin film deposition and diode fabrication; Serif Ruzgar, electrical and optical measurements, data analyses and graphs, discussion, interpretation, writing and editing.

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Correspondence to Serif Ruzgar.

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Ozgur, M., Ruzgar, S. Fabrication and Characterization of the Heterojunction Diode from Ternary Ni1-xCoxO Thin Films on n-Si Substrates by Sol-Gel Method. Braz J Phys 54, 77 (2024). https://doi.org/10.1007/s13538-024-01456-4

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