Abstract
Experimental data on studying the phonon and optical properties of GaAs nanowires with orientation (111) located on a gold substrate with the help of Raman scattering spectroscopy (RSS) and photoluminescence (PL) are presented. Structural parameters of nanowires are determined by the atomic-force microscopy (AFM) and scanning electron microscopy (SEM) methods. In the micro-RSS and micro-PL spectra of a single GaAs nanowire, the modes of optical phonons of GaAs and their overtones up to the third order and an exciton luminescence band are observed. In the micro-PL spectra, anisotropy of the PL intensity is observed; the maximum/minimum signal is observed at the polarization-vector direction along/across the wire. Mapping of nano-PL of a single GaAs nanowire is performed with a spatial resolution of 20 nm, which is significantly smaller than the diffraction limit. When passing to the nanometer scale, a plasmon amplification of the signal of the near-field exciton nano-PL conditioned by the metallized AFM-needle is revealed.
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ACKNOWLEDGMENTS
The authors are grateful to A.S. Medvedev and L.A. Nenasheva for producing probes for nano-PL.
Funding
This work is supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024).
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Translated by E. Smirnova
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Kalachev, I.V., Milekhin, I.A., Emel’yanov, E.A. et al. Raman Scattering Spectroscopy and Photoluminescence of GaAs Nanowires. Optoelectron.Instrument.Proc. 59, 659–666 (2023). https://doi.org/10.3103/S8756699023060055
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DOI: https://doi.org/10.3103/S8756699023060055