Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method
Tengkun
Li, 
*c
*c
Abstract
Mn-doped GaN crystals of a-plane and (11−22) plane were grown by the ammonothermal method. The Mn concentrations were characterized on the order of 1020 cm−3 by glow discharge mass spectrometry, and the valence state of Mn in GaN crystals was measured to be a mixed valence state of Mn2+ and Mn3+ using X-ray photoelectron spectroscopy. Raman scattering spectroscopy shows that due to the doping of Mn, the interaction potential energy between Ga and N ions changes, and the longitudinal optical mode E1(LO) shifts towards a lower frequency. The Raman scattering spectra of Mn–Mgk cation complexes formed by unintentional doping of Mg on the (11−22) plane were studied.
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