Abstract
Raman scattering spectra of 1–2 μm thick n-PbS(111) epitaxial films grown by molecular beam epitaxy on BaF2(111) substrates were obtained and analyzed. The spectra were recorded at a low excitation level of 0.36 mW/μm2, which did not cause photo- and thermal degradation of the films. It is shown that, in accordance with the symmetry selection rules, the bands in the spectra correspond to overtone or combination tones of phonon modes of PbS at special points of the Brillouin zone. The analysis of the bands of oxides and oxysulfates of lead, which can mask the bands of lead sulfide, was carried out. The obtained data were used in the analysis of the recorded Raman scattering spectra by epitaxial films of a ternary solid solution PbS0.5Se0.5.
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Funding
This study was performed under the state assignment to the Valiev Institute of Physics and Technology of the Russian Academy of Sciences from the Ministry of Education and Science of the Russian Federation, project no. FFNN-2022-0017, and as part of the initiative research effort of the Demidov Yaroslavl State University. The authors wish to thank S.V. Vasil’ev and V.V. Osokin for providing the results of analysis of spinodal decomposition of PbS1–xSex films performed at the “Diagnostics of Micro- and Nanostructures” common use center with financial support from the Ministry of Education and Science of the Russian Federation.
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Fedorov, A.V., Baranov, A.V. & Zimin, S.P. Features of Raman Scattering in Lead Sulfide and Lead Sulfide-Selenide Epitaxial Films. Opt. Spectrosc. 131, 975–979 (2023). https://doi.org/10.1134/S0030400X23100065
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DOI: https://doi.org/10.1134/S0030400X23100065