Skip to main content
SpringerLink
Log in

Comparison of Single Event Effect and Space Electrostatic Discharge Effect on FPGA Signal Transmission

  • Published:
Journal of Electronic Testing Aims and scope Submit manuscript

Abstract

As the central control component in aerospace products, SRAM-based FPGA finds extensive application in space. In its operational context, the space radiation environment introduces single event effect (SEE) and space electrostatic discharge effect (SESD) in FPGAs. This paper investigates SEE and SESD in SRAM-based FPGA using an integrated simulation method that combines device-level and circuit-level analyses. The findings reveal that the distinction in signal transmission primarily lies in the number of upsets and their correlation with the initial state. SEE can lead to single-bit or multi-bit upsets in SRAM, while SESD typically induces multi-bit upsets (MBU) in SRAM. Furthermore, the logic upset caused by SEE exhibits almost no correlation with the initial state of SRAM. Conversely, the upset caused by SESD is linked to the initial state, and the threshold voltage of Single Event Upsets (SEU) in different initial states is not uniform.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12
Fig. 13
Fig. 14

Similar content being viewed by others

Data Availability

The datasets used and analyzed during the current study are available from the corresponding author upon reasonable request.

References

  1. Yu J, Cai C, Ning B, Gao S, Liu T, Xu L, Shen M, Yu J (2021) Design and verification of multiple SEU mitigated circuits on SRAM-based FPGA system. Microelectron Reliab 126

  2. Trimberger S (2007) Security in SRAM FPGAs. IEEE Des Test Comput 24(6):581

    Article  Google Scholar 

  3. Skutnik S, Lajoie J (2006) A GEANT-based model for single event upsets in SRAM FPGAs for use in on-detector electronics. IEEE Trans Nucl Sci 53(4):2353–2360. https://doi.org/10.1109/TNS.2006.878282

    Article  Google Scholar 

  4. Wang H, Wang Y, Wang W (2021) Impact of TMR design layouts on single event tolerance in SRAM-based FPGAs. Microelectron Reliab 120. https://doi.org/10.1016/j.microrel.2021.114113

  5. Stoddard A, Gruwell A, Zabriskie P, Wirthlin MJ (2017) A hybrid approach to FPGA configuration scrubbing. IEEE Trans Nucl Sci 64(1):497–503. https://doi.org/10.1109/TNS.2016.2636666

    Article  Google Scholar 

  6. Binder D, Smith EC, Holman AB (1975) Satellite anomalies from Galactic cosmic rays. IEEE Trans Nucl Sci 22(6):2675–2680. https://doi.org/10.1109/TNS.1975.4328188

    Article  Google Scholar 

  7. Inguimbert C, Bourdarie S, Falguere D, Paulmier T, Ecoffet R, Balcon N (2013) Anomalies of the ADSP 21060 onboard the DEMETER Satellite. IEEE Trans Nucl Sci 60(6):4067–4073

    Article  Google Scholar 

  8. Pinto M, Poivey C, Gupta V, Pesce A, Poizat M, Vuolo M, Evans H (2024) Parametric evaluation of the see rate on the SEU and SEL monitors aboard the Alphasat using the IRPP model. IEEE Trans Nucl Sci 7(8):1821–1828. https://doi.org/10.1109/TNS.2023.3239536

    Article  Google Scholar 

  9. Chen R, Chen L, Han J, Wang X, Liang Y, Ma Y, Shangguan S (2021) Comparative study on the soft errors induced by single-event effect and space electrostatic discharge. Electronics 10(7):802. https://doi.org/10.3390/electronics10070802

    Article  Google Scholar 

  10. Dodd P (2013) Physics-based simulation of single-event effects. IEEE Trans Device Mater Reliab 5(3):343–357. https://doi.org/10.1109/TDMR.2005.855826

    Article  Google Scholar 

  11. Chen R, Chen L, Li S, Zhu X, Han J (2019) Comparative study on the transients induced by single event effect and space electrostatic discharge. IEEE Trans Device Mater Reliab 19(4):733–740. https://doi.org/10.1109/TDMR.2019.2950929.F6

    Article  Google Scholar 

  12. Wang X, Chen R, Yuan R, Chen Qian, Liang Y, Han J (2022) Experimental study on the space electrostatic discharge effect and the single event effect of SRAM devices for satellites. Appl Sci 12(14):7129. https://doi.org/10.3390/app12147129

    Article  Google Scholar 

  13. Love DP, Toomb DS, Wilkinson DC, Parkinson JB (2022) Penetrating electron fluctuations associated with GEO spacecraft anomalies. IEEE Trans Plasma Sci 28(6):2075–2084

    Article  Google Scholar 

  14. Paulmier T, Dirassen B, Payan D, Van Eesbeek (2009) M material charging in space environment: experimental test simulation and induced conductive mechanisms. IEEE Trans Dielectr Electr Insul 16(3):682–688

    Article  Google Scholar 

  15. Ille A, Stadler W, Pompl T, Gossner H, Brodbeck T (2009) Reliability aspects of gate oxide under ESD pulse stress. Microelectron Reliab 49(12):1407–1416

    Article  Google Scholar 

  16. Ker MD, Hsu SF (2006) Component-level measurement for transient-Induced Latch-up in CMOS ICs under System-Level ESD considerations. IEEE Trans Device Mater Reliab 6(3):461–472. https://doi.org/10.1109/TDMR.2006.882203

    Article  Google Scholar 

  17. Zhang L (2022) Single-event effect and long-term reliability of 28nm MOS devices. Xidian University

  18. Wang Y, Trefzer MA, Bale SJ, Walker JA, Tyrrell AM, Tyrrell, Andy M (2019) Multi-objective optimisation algorithm for routability and timing driven circuit clustering on FPGAs. IET Computers Digit Techniques 13(4):273–281

    Article  Google Scholar 

  19. Singh VK, Nag A, Bhattacharjee A, Pradhan SN (2022) Design and lifetime estimation of low-power 6-Input Look-Up table used in Modern FPGA. J Circuits Syst Comput 32(7):2350113

    Article  Google Scholar 

  20. Jin X, Tang M, Yu Q, Zhang H, Mei B, Sun Y, Tang L (2019) TCAD simulation research on the influence of particle incidence conditions on single event charge sharing effect of 28 nm SRAM. Electron Packaging 19(6):32–40

    Google Scholar 

  21. Cannon EH, Cabanas-Holmen M, Wert J, Amort T, Brees R, Koehn J, Meaker B, Normand E (2010) Heavy ion, high-energy, and low-energy proton SEE sensitivity of 90-nm RHBD SRAMs. IEEE Trans Nucl Sci 57(6):3493–3499. https://doi.org/10.1109/TNS.2010.2086482

    Article  Google Scholar 

  22. Wang T, Ding L, Guo H, Luo Y, Zhao W, Pan X (2019) Simulation of single-event effect in CMOS circuit based on dual-double exponential current source method. Mod Appl Phys 10(4):67–72

    Google Scholar 

  23. Wang X, Chen R, Han J, Yuang H, Yuan R, Chen Q, Liang Y, Cai Y, Ma Y, Cai M (2021) Comparative experimental study on space electrostatic discharge effect and single event effect of 130 nm SOI D flip-flop chains. At Energy Sci Technol 55(12):2191–2200

    Google Scholar 

  24. Han J, Chen R, Li H, Zhu X (2021) The anomalies supposed to be due to the single event effects may be caused by spacecraft charging induced electrostatic discharge. Spacecr Environ Eng 38(3):344–350. https://doi.org/10.12126/see.2021.03.015

    Article  Google Scholar 

  25. Black JD, Dodd PE, Warren KM (2013) Physics of multiple-node charge collection and impacts on single-event characterization and soft error rate prediction. IEEE Trans Nucl Sci 6(3):1836–1851. https://doi.org/10.1109/TNS.2013.2260357

    Article  Google Scholar 

  26. Fan ML, Wu YS, Hu VPH, Su P, Chuang CT (2010) Investigation of cell stability and write ability of FinFET subthreshold SRAM using analytical SNM model. IEEE Trans Electron Devices 57(6):1375–1381. https://doi.org/10.1109/TED.2010.2046988

    Article  Google Scholar 

  27. He C, Li G, Luo J, Liu E (2000) Analysis of single event upset in CMOS SRAMs. J Semicond 21(2):174–178

    Google Scholar 

Download references

Acknowledgements

The authors acknowledge support from National Natural Science Foundation of China (No. 12004329), Open Project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (No. SKLIPR2115), Postgraduate Research and Practice Innovation Program of Jiangsu Province (No. SJCX22_1704), Innovative Science and Technology Platform Project of Cooperation between Yangzhou City and Yangzhou University, China (Nos. YZ202026301 and YZ202026306).

Author information

Authors and Affiliations

  1. College of Electrical, Energy and Power Engineering, Yangzhou University, Yangzhou, 225127, China

    Rongxing Cao, Yan Liu, Jiayu Tian, Xianghua Zeng & Yuxiong Xue

  2. Innovation Academy for Microsatellites of Chinese Academy of Sciences, Shanghai, 201203, China

    Yulong Cai & Shuai Cui

  3. China Academy of Space Technology, Beijing, 100029, China

    Bo Mei & He Lv

  4. Institute of Special Environments Physical Sciences, Harbin Institute of Technology, Shenzhen, 518055, China

    Lin Zhao

Authors
  1. Rongxing Cao
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yan Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yulong Cai
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Bo Mei
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Lin Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Jiayu Tian
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Shuai Cui
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. He Lv
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Xianghua Zeng
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. Yuxiong Xue
    View author publications

    You can also search for this author in PubMed Google Scholar

Contributions

RC: Conceptualization, Methodology, Writing–review & editing, Supervision. YL: Methodology, Software, Investigation, Writing–review & editing. YC: Software, Investigation. BM: Investigation, Formal analysis. LZ: Investigation, Formal analysis. JT: Software, Investigation. SC: Software, Investigation. HL: Investigation, Formal analysis. XZ: Conceptualization, Methodology. YX: Conceptualization, Supervision.

Corresponding authors

Correspondence to Rongxing Cao or Yuxiong Xue.

Ethics declarations

Competing Interests

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Additional information

Responsible Editor:  A. Yan

Publisher’s Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Electronic Supplementary Material

Below is the link to the electronic supplementary material.

Supplementary Material 1

Rights and permissions

Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Cao, R., Liu, Y., Cai, Y. et al. Comparison of Single Event Effect and Space Electrostatic Discharge Effect on FPGA Signal Transmission. J Electron Test (2024). https://doi.org/10.1007/s10836-024-06114-w

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s10836-024-06114-w

Keywords

Search

Navigation