艾尔肯·阿不都瓦衣提 - 中国科学院新疆理化技术研究所 -

研究领域

新型光电材料与器件，辐射物理 III-V族化合物光电半导体材料的生长、表征和应用；MOCVD和MBE生长技术；新型光伏材料和器件；光电材料及器件辐射效应和辐射机理；光电材料及器件辐射加固技术。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

A. Olsson, A. Aierken, H. Jussila, J. Bauer, J. Oksanen, O. Breitenstein, H. Lipsanen, J. Tulkki, “Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures”, Journal of Applied Physics, 2014, 116:083105 P. Mattila, M. Bosund, H. Jussila, A. Aierken, J. Riikonen, T. Huhtio, H. Lipsanen, M.Sopanen, “Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces”, Applied Surface Science, 2014, 314:570-574 A. Olsson, A. Aierken, J. Oksanen, S. Suihkonen, H. Lipsanen, J. Tulkki, “Temperature dependence of droop onset in optically pumped intrinsic InGaAs/InP heterostructures”, Applied Physics Letters, 2013, 102:081123 A. Aierken, Q. Guo, T. Huhtio, M. Sopanen, Ch. F. He, Y. D. Li, L. Wen, D. Y. Ren, “Optical properties of electron beam andgamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures”, Radiation Physics and Chemistry, 2012, 83:42-47 S. Nagarajan, M. Ali, H. Jussila, P. Mattila, A. Aierken, M. Sopanen, H. Lipsanen, “Characterization of InGaAs/GaNAsstrain-compensated quantum dot solar cells”，Physica Status Solidi (c), 2012, 9:972-974 S. Nagarajan, A. Aierken, H. Jussila, K. Banerjee, M. Sopanen, H. Lipsanen, “Enhanced 1.3 μm luminescence from InGaAs self-assembled quantum dots with a GaAsN strain-compensating layer”, Semiconductor Science and Technology, 2011, 26:085029 M. Bosund, P. Mattila, A. Aierken, T. Hakkarainen, H. Koskenvaara, M. Sopanen, V-M. Airaksinen, H. Lipsanen, “GaAs surface passivation by plasma enhanced atomiclayer deposited aluminum nitrides”, Applied Surface Science, 2010, 256:7434-7437 A. Aierken, T. Hakkarainen, J. Riikonen, M. Sopanen, “InAs island-to-ring transformation by a partial capping layer”, Journal of Crystal Growth, 2008, 310:5077 A. Aierken, T. Hakkarainen, J. Riikonen, M. Sopanen, “Transformation of InAs islands to quantum ring structures by metalorganic vapor phase epitaxy”, Nanotechnology, 2008, 19:245304 A. Aierken, T. Hakkarainen, M. Sopanen, J. Riikonen, J. Sormunen, M. Mattila, H. Lipsanen, “Self-assembled InAs island formation on GaAs (110) by metalorganic vapor phase epitaxy”, Applied Surface Science, 2008, 254:2072 M. Bosund, A. Aierken, J. Tiilikainen, T. Hakkarainen, H. Lipsanen, “Passivation of GaAs surface by atomic-layer-deposited titanium nitride”, Applied Surface Science, 2008, 254:5385 A. Aierken, T. Hakkarainen, J. Tiilikainen, M. Mattila, J. Riikonen, M. Sopanen, H. Lipsanen, “Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110)”, Journal of Crystal Growth, 2007, 309:18 A. Aierken, J. Riikonen, M. Mattila, T. Hakkarainen, M. Sopanen, H. Lipsanen, “GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As-P exchange”, Applied Surface Science, 2007, 253:6232 J. Riikonen, J. Sormunen, H. Koskenvaara, M. Mattila, A. Aierken, T. Hakkarainen, M. Sopanen, and H. Lipsanen, “Effect of surface states on carrier dynamics in InGaAsP/InP stressor quantum dots”, Nanotechnology, 2006, 17:2181 A. Aierken, J. Riikonen, J. Sormunen, M. Sopanen, and H. Lipsanen, “Comparison of epitaxial thin layer GaN and InP passivations on InGaAs/GaAs near-surface quantum wells”, Applied Physics Letter, 2006, 88:221112