个人简介

男，1971年生，博士、副教授、硕士生导师，现在南京信息工程大学物理与光电工程学院应用物理系任教。主要从事二次电子发射理论和航天器充电（空间天气学）的研究工作。以第一作者且为通讯作者发表二次电子发射方面学术论文40余篇，其中20余篇被SCI和SCIE收录。 教育经历： 1993.9-1997.7安徽大学，应用物理专业，获学士学位。 1997.9-2000.7中国科学院等离子体所，等离子体物理专业，硕士学位。 2002.9-2005.7中国科学技术大学，核技术及应用专业，获博士学位。 工作经历： 2000.7-2002.9中国兵器工业部214所离子注入组组长。 2005.7-2008.7南京信息工程大学数理学院讲师。 2008.7-2015.3南京信息工程大学物理与光电工程学院副教授。 2015.3-2016.3 韩国光云大学电子与生物物理系副教授。 2016.3-现在 南京信息工程大学物理与光电工程学院副教授。 讲授课程 本科课程：近代物理、半导体物理、热力学、大学物理实验1、大学物理、 超导电性及应用等。 研究生课程：等离子体物理导论，磁流体力学。

研究领域

1. 二次电子发射理论（当前主要的研究方向） 2.航天器充电(空间天气学) 3.二次电子发射系数测量装置的研制

科研项目： 1. 微波电子枪的研制，国家创新工程，2002-2005（参加）； 2. 二次电子发射的研究和有效真二次电子发射系数的测量，南京信息工程大学科研基金，2006-2009（主持）； 3.2015.01-2018.12. 国家自然科学基金（面上项目,第二参与）.基于主动光学技术实现宽视场光谱仪准直系统方法的研究，基金号：11473049。

近期论文

查看导师最新文章 （温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1] The formula for the secondary electron yield at high incident electron energy from silver and copper，Nuclear Instruments and Methods in Physics Research B，267.2009.Ai-Gen Xie, Hao-Feng Zhao,Biao Song,Yuan-Ji Pei. SCI收录。 [2] The formulae for the secondary electron yield at high incident electron energy from gold and aluminum，Modern physics letters B，23.2009.Ai-Gen Xie,Quan-Qi Li,Tie-Bang Wang,Yuan-Ji Pei. SCI收录。 [3] The measurements of total electron yield from silver，Eur. Phys. J. Appl. Phys，48.2009.Ai-Gen Xie,Quan-Qi Li,Ling Wang,Yuan-Ji Pei. SCI收录。 [4] Xie Ai-Gen*, Zhao Hao-Feng,Wang Tie-Bang. Ratio of the mean secondary electron generation of backscattered electrons to primary electrons at high electron energy [J]，Nuclear Instruments and Methods in Physics Research B, 268(6), pp687-689,2010. SCI收录。 [5] Xie Ai-Gen*, Yao Yi-Jun, Su Jin, Zhang Jian. A universal formula for secondary electron yield from metals，Nuclear Instruments and Methods in Physics Research B，268(15), pp2565-2579,2010. SCI收录。 [6] Xie Ai-Gen*, Zhang Jian, Wang Tie-Bang. Universal Formula for Secondary Electron Yield of Metals at High Electron Energy and Incident Angle θ, Japanese Journal of Applied Physics, 50(12), pp126601-126601-4,2011. SCI收录。 [7] Xie Ai-Gen*, Zhang Jian, Wang Tie-Bang. A Universal formula for the secondary electron yield of metals at an incident angle of θ，Chinese Physics Letters，28(9), pp 097901-1-197901-4,2011. SCI收录。 [8] Xie Ai-Gen*, Xiao Shao-Rong, Zhan Yu, Zhao Hao-Feng. Formula for the probabilty of secondary electrons passing over the surface barrier into vacuum[J]，Chinese Physics Letters，29(11), pp117901-117901-4,2012. SCI收录。 [9] Xie Ai-Gen*, Li Qing-Fang, Cheng Yun-Yun, Wu Hong-Yan. The formulae for parameters of the secondary electron yield of insulators from 10 keV to 30 keV, Modern Physics Letters B, 27(32), pp1350238-1350248,2013. [10] Xie Ai-Gen*, Xiao Shao-Rong, Wu Hong-Yan. Mean escape depth of secondary electrons emitted from semiconductors and insulators, Indian Journal of Physics, 87(11), pp 1093-1097,2013. SCIE收录。 [11] Xie Ai-Gen*, Zhan Yu, Gao Zhi-Yong, Wu Hong-Yan.Formula for average energy required to produce a secondary electron in insulator, Chinese Physics B, 22(5), pp 057901-3,2013. SCI收录。 [12] Xie Ai-Gen*, Wu Hong-Yan, Xu Jia.Parameters of the secondary electron yield from metal, Journal of the Korean Physical Society, 62(5), pp 725-730,2013. SCI收录。 [13] Xie Ai-Gen*, Lai Min, Zhang Cheng-Yi. Formula for THE total stopping power from 2 keV to 10 keV for a metal, Journal of the Korean Physical Society, 62(1), pp 127-131,2013. SCI收录。 [14] Xie Ai-Gen*, Zhang Chen-Yi, Zhong Kun. Two contributions to the ratio of the mean secondary electron generation of backscattered electrons to primary electrons at high electron energy. Modern Physics Letters B, 28(6), pp 1450046-1-1450046-9,2014. SCI收录。 [15] Xie Ai-Gen*, Lai Min, Chen Yu Lin, et al. Formulae for secondary electron yield and the ratio of the average number of secondary electrons generated by a single backscattered electron to that generated by a single primary electron. Indian Journal of Pure & Applied Physics, 53(5), pp 298-303,2015. SCIE收录。 [16] Xie Ai-Gen*, Wang Ling, Mu Liu Hua. Formula for maximum secondary electron yield from metals. Surface Review and Letters, 22(2), pp 1550019,2015. SCI收录。 [17] Xie Ai-Gen*, Han-Sup Uhm, Chen Yu-Yu, et al. Maximum secondary electron yield and parameters of secondary electron yield of metals. Surface Review and Letters, 23(5), pp 1650039,2016. SCI收录。 [18] Xie Ai-Gen*, Xiao Shao-Rong, Wang Ling.Formulae for the secondary electron yield and total stopping power from 0.8 keV to 10 keV for metals. PRAMANA-JOURNAL OF PHYSICS, 86(5), pp 1127-1141,2016. SCI收录。 [19] Xie Ai-Gen*, Zhon Kun, Zhao De-Lin, et al.Formulae for low-energy secondary electron yield from different kinds of emitters as a function of measurable variables. Modern Physics Letters B, 31(10), pp 1750105-1-1750105-11,2017. SCI收录。 [20] Xie Ai-Gen*, Liu Zhan-Hui, Xia Yu-Qing, et al. Maximum secondary electron yields from semiconductors and insulators. Surface Review and Letters, 24(3), pp 1750045,2017. SCI收录。 [21] Xie Ai-Gen*, Lai Min, Chen Yu Lin, et al. Formulae for secondary electron yield from insulators and semiconductors. Nuclear Science and Technology. 28(10), pp 1750045,2017. SCIE收录。 [22] Xie Ai-Gen*, Xia Yu-Qing, Wang Xing, et al. Formulae for maximum yield and mean escape depth of secondary electrons emitted from metals. Modern Physics Letters B, on line(https://doi.org/10.1142/S0217984917502396),2017. SCI源刊。 [23] Xie Ai-Gen*, Liu Hao-Yu, Yu Yang, et al. Formulae for maximum escape depth f rediffused electrons and backscattering coefficient of metal films. Surface Review and Letters, on line(https:// doi.org/10.1142/S0218625X18500464),2017. SCI源刊。