吴翟 - 郑州大学 - 物理学院

个人简介

吴翟，男，1984年生，安徽安庆人，副教授（校直聘教授），硕士生导师。2013年博士毕业于合肥工业大学材料工程学院材料物理与化学专业。2014年赴香港大学化学系任咏华院士课题组从事博士后研究。2015年5月到郑州大学物理工程学院任教至今，2016年1月被郑州大学直聘为教授。近年来一直在从事低维纳米半导体光电材料与器件的研究，发表SCI论文100余篇，“ESI高被引论文”2篇，引用超2200余次；申请发明专利13项。先后主持了国家自然科学基金、中国博士后基金、河南省科技厅重点研发与推广专项，河南省高等学校重点科研项目，郑州大学物理学科推进计划等科研项目。科研成果先后主持了国家自然科学基金青年项目，中国博士后科学基金项目，河南省科技厅重点研发与推广专项，河南省高等学校重点科研项目，郑州大学物理学科推进计划等科研项目。在Journal of the American Chemical Society, ACS nano, NPG Asia Materials, ACS photonics, Nano research, Journal of Materials ChemistryA等国际期刊上已发表SCI学术论文100余篇，“ESI高被引论文”2篇，引用超2200余次；申请发明专利14项，包含美国专利1项。主持的科研项目： (1)主持：国家自然科学基金(青年项目； 2017.01-2019.12) (2)主持：中国博士后科学基金(面上项目；2015.09-2017.06) (3)主持：河南省科技厅重点研发与推广专项(2018.01-2020.12) (4)主持：河南省高等学校重点科研项目(2017.01-2018.12) (5)主持：郑州大学青年教师启动基金(2015.09-2018.08) (6)主持：郑州大学物理学科推进计划(2019.01-2021.12) 发明专利： [1]一种二维二硒化钯纳米薄膜在宽波段偏振光信号检测中的应用，CN201910247192.9 [2]基于二维二硒化铂纳米薄膜与碲化镉晶体的异质结型近红外光电探测器及其制备方法，CN201811336880.4 [3]基于二维二硒化钯纳米薄膜与锗的自驱动异质结型红外光电探测器及其制备方法，CN201811336879.1 [4]基于二维二硫化钼纳米薄膜与碲化镉晶体的II型异质结型近红外光电探测器及其制备方法，CN201811336892.7 [5]一种双模湿度传感器及其制备方法，CN201710375959.7 [6]一种异质结型光电探测器及其制备方法，CN201210081208.1 [7]基于硒化镉纳米线肖特基结型多字节非挥发性存储器及其制备方法，CN201210077102.4 [8]Solution-processable donor-acceptor compounds containing boron (iii) moieties for the fabrication of optical reflectors and organic memory devices and their preparation thereof，US20160343943 A1（美国专利） [9]以Ni(Mg)O作为空穴提供层的钙钛矿绿光LED及制备方法，CN201610219503.7 [10]以ZnO纳米墙网络作为电子注入层的钙钛矿LED及制备方法，CN201610220011.X [11]一种阵列基板及其制备方法和显示装置，CN201310705330.6 [12]基于环氧树脂拉膜分散纳米线的方法，CN201010143683.8 [13]一种感温发光变色荧光材料及其制备方法，CN201110202844.0 [14]一种感温发光变色荧光材料的用途，CN201110202901.5

研究领域

主要从事低维半导体纳米结构的制备、表征及应用研究，以及相应新型微纳器件的设计、制备、性能的研究工作，探索纳米材料在新型电子、光电子器件的应用，包括： (1)新型二维纳米光电探测器：基于二维纳米结构半导体材料的高性能紫外和红外光电探测器。 (2)新型低维纳米结构传感器：基于低维纳米结构的高灵敏度的湿敏、气敏传感器的设计与性能研究。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1]D. Wu, J. Guo, J. Du, C. Xia, L. Zeng*, Y. Tian, Z. Shi, Y. Tian, X. J. Li, Y. H. Tsang* and J. Jie*, Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction, ACS Nano, 2019, 13, 9907-9917. (IF=13.9) [2]Di Wu, Cheng Jia, Fenghua Shi, Longhui Zeng,* Pei Lin, Lin Dong, Zhifeng Shi, Yongtao Tian, Xinjian Li, and Jiansheng Jie*, Mixed-dimensional PdSe2/SiNWA heterostructures based photovoltaic detectors towards self-driven, broadband photodetection, infrared imaging and humidity sensing, J. Mater. Chem. A, 2020, DOI: 10.1039/C9TA13611H. (IF=10.7) [3]Longhui Zeng, Shenghuang Lin, Zhenhua Lou, Huiyu Yuan, Hui Long, Yanyong Li, Wei Lu, Shu Ping Lau, Di Wu*，Yuen Hong Tsang*, Ultrafast and Sensitive Photodetector Based on PtSe2/Silicon Nanowire Array Heterojunction with Multiband Spectral Response from 200 to 1550 nm, NPG Asia Materials, 2018, 10, 352-362. (IF=9.157) [4]Cheng Jia, Xiaowen Huang, Di Wu*, Yong-Zhi Tian, Jiawen Guo, Zhihui Zhao, Zhifeng Shi, Yongtao Tian, Jiansheng Jie and Xinjian Li*, Ultrasensitive self-driven broadband photodetector based on 2D-WS2/GaAs type-II Zener heterojunction, Nanoscale, 2020,DOI:10.1039/C9NR10348A.(IF=6.97) [5]R. Zhuo, L. Zeng, H. Yuan, D. Wu*, Y. Wang, Z. Shi, T. Xu, Y. Tian, X. Li* and Y. H. Tsang*, In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity, Nano Research,2019,12, 183-189. (IF=8.515,ESI高被引论文) [6]E. Wu, D. Wu*, C. Jia, Y. Wang, H. Yuan, L. Zeng*, T. Xu, Z. Shi, Y. Tian and X. Li, In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared， ACS Photonics,2019, 6, 565-572. (IF=7.143) [7]D. Wu， Wang, Y.， Zeng, L.*， Jia, C.， Wu, E.，Xu, T.， Shi, Z.， Tian, Y.， Li, X. J.， Tsang, Y. H.*， Design of 2D layered PtSe2heterojunction for the high-performance room-temperature broadband infrared photodetector，ACS Photonics, 2018, 5, 3820-3827.(IF=7.143) [8]Z. Zhao, D. Wu*, J. Guo, E. Wu, C. Jia, Z. Shi, Y. Tian, X. Li and Y. Tian*, Synthesis of large-area 2D WS2films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications, J. Mater. Chem. C,2019, 7, 12121-12126. (IF=6.641) [9]C. Jia, D. Wu*, E. Wu, J. Guo, Z. Zhao, Z. Shi, T. Xu, X. Huang*, Y. Tian and X. Li, A self-powered high-performance photodetector based on a MoS2/GaAs heterojunction with high polarization sensitivity, J. Mater. Chem. C, 2019, 7, 3817-3821. (IF=6.641) [10]R. Zhuo, D. Wu*, Y. Wang, E. Wu, C. Jia, Z. Shi, T. Xu, Y. Tian and X. Li*, A self-powered solar-blind photodetector based on a MoS2/β-Ga2O3heterojunction, J. Mater. Chem. C, 2018, 6, 10982-10986. (IF=6.641) [11]L. Z. Lei, Z. F. Shi, Y. Li, Z. Z. Ma, F. Zhang, T. T. Xu, Y. T. Tian, D. Wu*, X. J. Li and G. T. Du, High-efficiency and air-stable photodetectors based on lead-free double perovskite Cs2AgBiBr6 thin films, J. Mater. Chem. C, 2018, 6, 7982-7988. (IF=6.641) [12]Yuange Wang, Xiaowen Huang, Di Wu*，Ranran Zhuo, Enping Wu, Cheng Jia, Zhifeng Shi, Tingting Xu,* Yongtao Tian and Xinjian Li, A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm, J. Mater. Chem. C, 2018, 6, 4861-4865. (IF=6.641) [13]D. Wu, Z. Lou, Y. Wang, Z. Yao, T. Xu, Z. Shi, J. Xu, Y. Tian, X. Li* and Y. H. Tsang*, Photovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunction, Solar Energy Materials and Solar Cells, 2018, 182, 272-280. (IF=6.019) [14]R. Zhuo, Y. Wang, D. Wu*, Z. Lou, Z. Shi, T. Xu, J. Xu, Y. Tian and X. Li*, High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction, J. Mater. Chem. C,2018, 6, 299-303. (IF=6.641,ESI高被引论文) [15]T. Xu, Y. Liu, Y. Pei, Y. Chen, Z. Jiang, Z. Shi, J. Xu, D. Wu*, Y. Tian and X. Li, The ultra-high NO2response of ultra-thin WS2nanosheets synthesized by hydrothermal and calcination processes, Sensors and Actuators B: Chemical, 2018, 259, 789-796. (IF=6.393) [16]D. Wu, Z. Lou, Y. Wang, T. Xu*, Z. Shi, J. Xu, Y. Tian and X. Li*, Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor, Nanotechnology, 2017, 28, 435503. (IF=3.399) [17]Z. Lou, L. Zeng, Y. Wang, D. Wu*, T. Xu, Z. Shi, Y. Tian, X. Li and Y. H. Tsang*, High-performance MoS2/Si heterojunction broadband photodetectors from deep ultraviolet to near infrared, Optics Letters, 2017, 42, 3335. (IF=3.866) [18]Z. Lou, D. Wu*, K. Bu, T. Xu, Z. Shi, J. Xu, Y. Tian and X. Li, Dual-mode high-sensitivity humidity sensor based on MoS2/Si nanowires array heterojunction, Journal of Alloys and Compounds,2017, 726, 632-637. (IF=4.175) [19]D. Wu*, T. T. Xu, Z. F. Shi, Y. T. Tian, X. J. Li, Y. Q. Yu and Y. Jiang, Two-terminal nonvolatile resistive switching memory devices based on n-CdSe NR/p-Si heterojunctions, Journal of Alloys and Compounds, 2017, 695, 1653-1657. (IF=4.175) [20]D. Wu*, Y. Chang, Z. Lou, T. Xu, J. Xu, Z. Shi, Y. Tian and X. Li, Controllable synthesis of ternary ZnSxSe1-xnanowires with tunable band-gaps for optoelectronic applications, Journal of Alloys and Compounds, 2017, 708, 623-627. (IF=4.175) [21]Y. Chang, D. Wu*, T. Xu, Z. Shi, Y. Tian and X. Li, Fabrication of p-type ZnTe NW/In Schottky diodes for high-speed photodetectors, Journal of Materials Science-Materials in Electronics, 2017, 28, 1720-1725. (IF=2.195) [22]D. Wu*, T. Xu, Z. Shi, Y. Tian and X. Li, Construction of ZnTe nanowires/Si p–n heterojunctions for electronic and optoelectronic applications, Journal of Alloys and Compounds, 2016, 661, 231-236. (IF=4.175) [23]D. Wu*, Z. Shi, T. Xu, Y. Tian and X. Li, Gate-controllable photoresponse of nitrogen-doped p-type ZnSe nanoribbons top-gate FETs, Materials Letters, 2016, 164, 84-88. (IF=3.019) [24]V. K. Au#, D. Wu#and V. W. Yam, Organic Memory Devices Based on a Bis-Cyclometalated Alkynylgold(III) Complex, J. Am. Chem. Soc., 2015, 137, 4654-4657.(共同一作,IF=13.038) [25]Di Wu, Yang Jiang*, Xudong Yao, Yajing Chang, Yugang Zhang, Yongqiang Yu, Zhifeng Zhu, Yan Zhang, Xinzheng Lan, Honghai Zhong, Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties, Journal of Materials Chemistry C, 2014, 2(32), 6547-6553. (IF=6.626) [26]Di Wu, Yang Jiang*, Yongqiang Yu, Yugang Zhang, Guohua Li, Zhifeng Zhu, Chunyan Wu, Li Wang, Linbao Luo, Jiansheng Jie*, Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires, Nanotechnology, 2012, 23(48), 485203. (IF=3.842) [27]Di Wu, Yang Jiang*, Yugang Zhang, Yongqiang Yu, Zhifeng Zhu, Xinzheng Lan, Fangze Li, Chunyan Wu, Li Wang, Linbao Luo*, Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes, Journal of Materials Chemistry, 2012, 22(43), 23272-23276. (IF=6.626) [28]Di Wu, Yang Jiang*, Yugang Zhang, Junwei Li, Yongqiang Yu, Yuping Zhang, Zhifeng Zhu, Li Wang, Chunyan Wu, Linbao Luo, Jiansheng Jie*, Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons, Journal of Materials Chemistry, 2012, 22(13), 6206-6212. (IF=6.626) [29]Di Wu, Yang Jiang*, Shanying Li, Fangze Li, Junwei Li, Xinzheng Lan, Yugang Zhang, Chunyan Wu, Linbao Luo, Jiansheng Jie*, Construction of high-quality CdS:Ga nanoribbon/silicon heterojunctions and their nano-optoelectronic applications, Nanotechnology, 2011, 22(40), 405201. (IF=3.842) [30]Di Wu, Yang Jiang*, Li Wang, Shanying Li, Bo Wu, Xinzheng Lan, Yongqiang Yu, Chunyan Wu, Zhuangbing Wang, Jiansheng Jie*, High-performance CdS:P nanoribbon field-effect transistors constructed with high-kappa dielectric and top-gate geometry, Applied Physics Letters, 2010, 96(12), 123118. (IF=3.84)