个人简介
博士，专职研究员，2012年毕业于电子科技大学微电子学与固体电子学专业，获博士学位。博士期间从事硅基功率半导体器件及宽禁带功率半导体器件的研发工作。
2009年9月至2011年9月，赴加拿大多伦多大学电气工程学院从事宽禁带功率半导体器件的研发。回国后加入浙江大学电气工程学院，重点从事硅基IGBT等器件及模块的产业化技术攻关以及第三代功率半导体器件的研发工作。
至目前为止在国内外顶级刊物及会议发表论文20余篇，申报专利20余项。
作为项目负责人，目前承担科技部863计划及国家重点研发计划子课题四项、国家自然科学基金青年基金一项、国网江苏省电力公司横向合作项目十一项、中央高校基本业务费资助的相关研究两项等。
近期论文
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[1]M.C.Hou,X.Gang*,and S.Kuang,'Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact with Laser Annealing.'IEEE Electron Device Letters,vol.39,no.8,pp.1137-1140,Aug.2018
[2]M.C.Hou,X.Gang*,and S.Kuang,'Low surface damage during ohmic contact formation in AlGaN/GaN HEMT by selective laser annealing.'Electronics Letters,vol.55,no.11,pp.658-660,May.2019
[3]M.C.Hou,X.Gang*,and S.Kuang,'Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing.'Chinese Physics B,vol.28,no.3,pp.037302,Feb.2019
[4]Xie Gang*,Tang Cen,Wang Tao,Guo Qing,Zhang Bo,Sheng Kuang and Wai Tung Ng.An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient.Chin.Phys.B,Vol.22,No.2,2013:026103-1−026103-5.(SCI,First author)
[5]Deng Yong-Hui,Xie Gang*,Wang Tao,and Sheng Kuang.A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain.Chin.Phys.B,Vol.22,No.9,2013:097201-1−097201-5.(SCI,Corresponding author)
[6]Tang Cen,Xie Gang*,Zhang Li,Guo Qing,Wang Tao,Sheng Kuang,“Electricfield modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes,”Chin.Physics.B,Vol.22,No.10,2013:106107-1−106107-6.(SCI,Corresponding author)
[7]Xueqian Zhong,Li Zhang,Gang Xie,Qing Guo*,Tao Wang and Kuang Sheng,“High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure,”Microelectron Reliab(2013),doi:http://dx.doi.org/10.1016/j.microrel.2013.05.003(SCI)
[8]Chen Chen,Gang Xie*,Cen Tang,and Kuang Sheng.Investigation of Gate Degradation Characteristics of AlGaN/GaN HEMTs under PWM Stress.Adcanced Materials Research,Vols.,732-733,2013,pp:1255-1260(EI)
[9]Gang Xie,Edward Xu,Junmin Lee,Niloufar Hashemi,Bo Zhang,Fred Y.Fu,Wai Tung Ng.Breakdown Voltage Enhancement Technique for RF Based AlGaN/GaN HEMTs with a Source-connected Air-bridge Field Plate.IEEE Electron Device Letters,Vol.23,No.5,2012:670-672(SCI)
[10]Gang Xie,Edward Xu,Bo Zhang,Wai Tung Ng.Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF Compatible process.Microelectron Reliab,Vol.52,No.6,2012:964-968(SCI)
[11]Gang Xie,Edward Xu,Junmin Lee,Niloufar Hashemi,Bo Zhang,Fred Y.Fu,Wai Tung Ng.An AlGaN/GaN HEMT with Reduced Surface Electric Field and Improved Breakdown Voltage.Chinese Physics B,Vol.21,No.8,2012:086105-1−086105-5(SCI)
[12]Gang Xie,Edward Xu,Junmin Lee,Niloufar Hashemi,Bo Zhang,Fred Y.Fu,Wai Tung Ng.Breakdown Voltage Enhancement Technique for RF Process Compatible Power AlGaN/GaN HEMTs,ISPSD 2012,Bruges,Belgium(EI)
[13]Gang Xie,Bo Zhang,Fred Y.Fu,Wai Tung Ng.Breakdown Voltage Enhancement for GaN High Electron Mobility Transistors.ISPSD 2010,Hiroshima,Japan(EI)
[14]Gang Xie,Edward Xu,Junmin Lee,Niloufar Hashemi,Bo Zhang,Fred Y.Fu,Wai Tung Ng.Breakdown Voltage Enhancement for Power AlGaN/GaN HEMTs with Air-bridge Field Plate,EDSSC 2011,Tianjin,China(EI)
[15]Gang Xie,Bo Zhang,Fred Y.Fu,Wai Tung Ng.GaN High Electron Mobility Transistors with Localized Mg Doping and Drain Metal Extension.ICSICT 2010,Shanghai,China(EI)
[16]Gang Xie,Bo Zhang.Self-clamping Thyristor mode LIGBT based on SOI.EDSSC 2008,Hong Kong(EI)
[17]谢刚,廖忠平,李泽宏,周春华.一种新型超势垒整流器.微电子学,Vol.38,No.4,2008.8
[18]Chen Wensuo,Xie Gang,Zhang Bo,Li Zehong,Li Zhaoji.Novel Lateral IGBT with n-region controlled anode on SOI substrate.Journal of Semiconductors,Vol.30,No.11,2009,114005(EI)
[19]Wensuo Chen,Gang Xie,Bo Zhang,Zhaoji Li,Mei Zhao.Fast speed lateral IGBT with buried n-region controlled anode on SOI substrate.EDSSC 2009.Page(s):372-375(EI)
[20]Wensuo Chen,Gang Xie,Bo Zhang,Zehong Li,Mei Zhao,Zhaoji Li.New lateral IGBT with controlled anode on SOI substrate for PDP scan driver IC.ICCCAS 2009.Page(s):628-630(EI)
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