Abstract

Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface is studied. After diffusion, the silicon samples are examined using the Van der Pauw method and a scanning electron microscopy in order to determine the concentration distribution of impurity atoms of phosphorus and gallium.

中文翻译：

---

磷和镓从磷化镓沉积层扩散到硅中

摘要

研究了沉积在硅表面上的磷化镓 GaP 层的扩散。扩散后，使用 Van der Pauw 方法和扫描电子显微镜检查硅样品，以确定磷和镓杂质原子的浓度分布。