Abstract

The features of the formation of a hidden lead-silicate insulating layer in silicon substrates are considered. To do this, ions of molecular oxygen and lead are sequentially implanted into them in an atomic ratio of 75 : 1 then annealing is carried out at a temperature of 1150°C in an environment of dry oxygen. The distribution of the implanted ions in the experimental samples is recorded by the method of secondary ion mass spectrometry. It is shown that the latent insulator is formed in the process of the spinodal decomposition of a solid solution of SiO_x–PbO_x in the form of a three-layer structure. Its middle part is silicon dioxide doped with lead ions and the side parts consist of a lead-silicate phase. A relaxation diffusion model is proposed to analyze the distribution profile of lead.

中文翻译：

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单晶硅中隐藏的硅酸铅层的离子束合成

摘要

考虑了在硅衬底中形成隐藏的硅酸铅绝缘层的特征。为此，将分子氧和铅的离子以75:1的原子比依次注入其中，然后在干氧环境中在1150°C的温度下进行退火。通过二次离子质谱法记录实验样品中注入离子的分布。结果表明，潜在绝缘体是在三层结构的SiO _x -PbO _x固溶体的旋节线分解过程中形成的。其中间部分是掺杂铅离子的二氧化硅，侧面部分由硅酸铅相组成。提出了弛豫扩散模型来分析铅的分布轮廓。