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Fragmentary Model of the Atomic Structure of the Ion-Conducting Semiconductor Glass AgGeAsSe3
Glass Physics and Chemistry ( IF 0.7 ) Pub Date : 2023-11-16 , DOI: 10.1134/s1087659623600497
K. B. Aleinikova , E. N. Zinchenko , N. V. Melnikova

Abstract

The atomic radial distribution function of vitreous AgGeAsSe3, obtained based on the experimental intensity curves taken with monochromatic copper and molybdenum radiation, is interpreted using a fragmentary model in the entire ordering region (~9 Å). It is shown that the glass consists of selenium and selenium-arsenic tetrahedra with germanium and silver atoms inside. The spatial arrangement of such tetrahedra in glass within the ordering region is similar to their arrangement in the GeAsSe and GeSe2 structures. It is proposed that the “openwork” structure of the fragments of these structures allows the movement of Ag+ ions (ionic conductivity) in vitreous AgGeAsSe3. Fragments of the structure of the ion-conducting compound Ag2Se are not found in the studied glass.



中文翻译:

离子导电半导体玻璃AgGeAsSe3原子结构的碎片模型

摘要

玻璃体 AgGeAsSe 3的原子径向分布函数是根据单色铜和钼辐射的实验强度曲线获得的,使用整个有序区域 (~9 Å) 的碎片模型进行解释。结果表明,该玻璃由硒和硒砷四面体组成,内部有锗和银原子。玻璃中这种四面体在有序区域内的空间排列与它们在GeAsSe和GeSe 2结构中的排列相似。提出这些结构的片段的“镂空”结构允许Ag +离子在玻璃体AgGeAsSe 3中移动(离子电导率) 。在所研究的玻璃中没有发现离子导电化合物Ag 2 Se 的结构片段。

更新日期:2023-11-17
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