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Nano-Sized Copper Films Prepared by Magnetron Sputtering
Journal of Structural Chemistry ( IF 0.8 ) Pub Date : 2023-12-29 , DOI: 10.1134/s0022476623120156
V. S. Sulyaeva , V. R. Shayapov , M. M. Syrokvashin , A. K. Kozhevnikov , M. L. Kosinova

Abstract

Copper films with a thickness varying from 6 nm to 100 nm are prepared by magnetron sputtering. The films are characterized by homogeneous and fine-grained microstructure. The X-ray diffraction data confirm formation of a copper fcc phase orientated predominantly in the (111) direction. Depending on the growth conditions, the size of Cu grains in the films varies from 7 nm to 20 nm. The refractive index of the films increases from 0.52 to 1.22 with decreasing copper film thickness. The transmittance of the films decreases as their thickness increases from 6 nm to 62 nm, and the transparency of the films with the same thickness decreases with increasing sputtering power and decreasing argon flow rate. The surface resistivity of the films decreases from 8.89±0.06 Ω/sq to 1.47±0.01 Ω/sq as their thickness increases from 20 nm to 70 nm.



中文翻译:

磁控溅射制备纳米铜薄膜

摘要

采用磁控溅射法制备了厚度为 6 nm 至 100 nm 的铜膜。该薄膜具有均匀且细晶的微观结构。X射线衍射数据证实了主要沿(111)方向取向的铜fcc相的形成。根据生长条件,薄膜中 Cu 晶粒的尺寸从 7 nm 到 20 nm 不等。随着铜膜厚度的减小,薄膜的折射率从0.52增加到1.22。薄膜的透过率随着厚度从6 nm增加到62 nm而降低,相同厚度的薄膜透明度随着溅射功率的增加和氩气流量的降低而降低。随着厚度从20 nm增加到70 nm,薄膜的表面电阻率从8.89±0.06 Ω/sq下降到1.47±0.01 Ω/sq。

更新日期:2023-12-30
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