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Design and Fabrication of Indium Tin Oxide Based Thin Film Piezoresistive Pressure Sensor
Experimental Techniques ( IF 1.6 ) Pub Date : 2024-01-05 , DOI: 10.1007/s40799-023-00695-5
S. Mala , H. K. E. Latha , A. Udayakumar

The design and development of Indium Tin Oxide (ITO) thin film based piezoresistive pressure sensor is presented in this paper. ITO (90:10) nanoparticles were synthesized by green combustion method using indium and tin as precursors and, carica papaya seed extract as fuel. ITO (90:10) thin film piezoresistors were deposited using synthesized nanoparticles on AlN coated circular steel (SS 304) diaphragm using E-beam evaporation technique. Diaphragm models of different thickness (0.75, 1 and 1.25 mm) were created using ANSYS finite element analysis in order to determine the maximum stress and deflection region for applied pressure of 1 to 10 bar. ANSYS results exhibited that maximum stress and deflection occurred at the center and circumference of diaphragm. ITO thin film piezoresistors were deposited at these regions using mechanical mask. TiW metal contact was established to these ITO thin film piezoresistors using DC sputtering method. ITO thin film piezoresistive pressure sensor with TiW contact connected in Wheatstone full bridge configuration was calibrated and tested for 50 pressure cycles by applying 2 V DC supply. Sensitivity (S) of the developed ITO thin film pressure sensor was obtained as 0.686, 0.566 and 0.495 mV/bar for diaphragm thickness of 0.75, 1, and 1.25 mm pressure sensors respectively. The non-linearity (NLi) in the output response of the pressure sensors was found to be 9.14, 9.82 and 11.27% for diaphragm thickness of 0.75, 1, and 1.25 mm respectively. Hysteresis errors were found to be 0.0344, 0.0525 and 0.054 for diaphragm thickness of 0.75, 1, and 1.25 mm respectively.



中文翻译:

氧化铟锡基薄膜压阻式压力传感器的设计与制造

本文介绍了基于氧化铟锡(ITO)薄膜的压阻式压力传感器的设计和开发。以铟、锡为前驱体,番木瓜籽提取物为燃料,采用绿色燃烧法合成了ITO(90:10)纳米粒子。使用电子束蒸发技术,使用合成纳米颗粒在 AlN 涂层圆钢 (SS 304) 隔膜上沉积 ITO (90:10) 薄膜压敏电阻。使用 ANSYS 有限元分析创建不同厚度(0.75、1 和 1.25 mm)的隔膜模型,以确定施加 1 至 10 bar 压力时的最大应力和偏转区域。ANSYS 结果表明,最大应力和挠度发生在隔膜的中心和周边。使用机械掩模在这些区域沉积 ITO 薄膜压敏电阻。使用直流溅射方法与这些 ITO 薄膜压敏电阻建立 TiW 金属接触。采用惠斯通全桥配置连接的 TiW 触点的 ITO 薄膜压阻压力传感器通过施加 2 V DC 电源进行了 50 个压力循环的校准和测试。对于隔膜厚度为 0.75、1 和 1.25 mm 的压力传感器,所开发的 ITO 薄膜压力传感器的灵敏度 (S) 分别为 0.686、0.566 和 0.495 mV/bar。对于厚度为 0.75、1 和 1.25 mm 的隔膜,压力传感器输出响应的非线性 (NLi) 分别为 9.14%、9.82% 和 11.27%。对于厚度为 0.75、1 和 1.25 mm 的膜片,滞后误差分别为 0.0344、0.0525 和 0.054。

更新日期:2024-01-06
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