SiO_x-based resistive switching (RS) cells composed of Cu as the active electrode were fabricated on flexible muscovite mica flakes using DC and radio frequency magnetron sputtering techniques. In one set of the metal–insulator–metal (MIM) devices, Cu-nanoparticles (Cu-NPs) have been embedded into the SiO_x layer and their RS properties have been compared with the devices without the Cu-NPs. All the devices exhibited forming free bipolar RS characteristics. Room temperature DC current–voltage (I–V) measurements suggest improved resistance windows for the Cu-NP-embedded MIM devices. Analysis of the DC I–V characteristics suggests electrochemical metallization-driven RS, where current conduction follows Ohmic and space-charge-limited conductions mechanism for low and high resistance states, respectively. The resistance windows of the Cu-NPs-embedded MIM structures tested for multiple cycles do not degrade under different bending conditions, indicating their mechanical robustness for potential flexible device applications.

采用直流和射频磁控溅射技术在柔性白云母片上制备了以 Cu 作为活性电极的SiO _{x基电阻开关（RS）电池。}在一组金属-绝缘体-金属 (MIM) 器件中，铜纳米颗粒 (Cu-NP) 已嵌入 SiO _x层中，并将其 RS 性能与不含 Cu-NP 的器件进行了比较。所有器件均表现出形成自由双极 RS 特性。室温直流电流-电压 ( I-V ) 测量表明 Cu-NP 嵌入式 MIM 器件的电阻窗口有所改善。对 DC I-V特性的分析表明电化学金属化驱动 RS，其中电流传导分别遵循低电阻状态和高电阻状态的欧姆传导机制和空间电荷限制传导机制。经过多次循环测试的 Cu-NP 嵌入 MIM 结构的电阻窗口在不同的弯曲条件下不会退化，表明它们对于潜在的柔性设备应用具有机械鲁棒性。