Quantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers. However, the hitherto reported recombination lifetimes (40 ps) and spin relaxation times (440 ps) of (110) InGaAs/AlGaAs structures are insufficient. Here it is shown that higher growth temperatures and higher V/III beam equivalent pressure ratios than previously used in crystal growth by molecular beam epitaxy lead to recombination and spin relaxation times in the nanosecond range at RT, meeting the requirements for application in spin lasers.

中文翻译：

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(110) InGaAs/AlGaAs 量子阱在室温下的纳秒复合寿命和自旋弛豫时间

(110) 取向的 InGaAs/AlGaAs 中的量子阱作为具有圆偏振发射的自旋控制激光器中的有源层很有吸引力，而自旋弛豫时间预计比 (100) 取向层更长。然而，迄今为止报道的（110）InGaAs/AlGaAs结构的复合寿命（40 ps）和自旋弛豫时间（440 ps）是不够的。这里表明，与之前分子束外延晶体生长中使用的更高的生长温度和更高的 V/III 束当量压力比导致室温下纳秒范围内的复合和自旋弛豫时间，满足自旋激光器的应用要求。