${\mathrm{V}}_2{\mathrm{O}}_3$, as a typical strongly correlated material, possesses great application value due to its unique metal-insulator transition property. However, the difficulty of epitaxially growing high-quality ${\mathrm{V}}_2{\mathrm{O}}_3$ thin films on semiconductor substrates has dramatically limited its development in electronic devices. Here, we utilize the similarity of the local structure of the (001) plane to achieve the epitaxial growth of high-quality ${\mathrm{V}}_2{\mathrm{O}}_3$ thin films on the 4H-SiC substrate. By changing the strain in the films to induce the paramagnetic metal (PM) to paramagnetic insulator (PI) transition occurrence, we realize a giant resistivity change ($\mathrm{\Delta }\mathrm{R}/\mathrm{R}=107500\%$) at room temperature. Raman spectra results show that the electrical properties of the strain-controlled films are realized by increasing/decreasing the $a_{1g}$ orbital occupation, supporting the scenario of trigonal distortion, in which the PM-PI transition can be understood as orbital-selective MIT caused by small changes in the trigonal distortion. The ability to epitaxially grow on semiconductor substrates and to modulate electrical properties by strain makes ${\mathrm{V}}_2{\mathrm{O}}_3/\text{4H-SiC}$ thin films an ideal platform for exploring and studying Mott devices.

中文翻译：

---

SiC 衬底上外延生长的应变 V2O3 薄膜中的可调谐金属-绝缘体转变

${\mathrm{V}}_2{\mathrm{氧}}_3$作为一种典型的强相关材料，由于其独特的金属-绝缘体转变特性而具有巨大的应用价值。然而，外延生长高质量的困难${\mathrm{V}}_2{\mathrm{氧}}_3$半导体基板上的薄膜极大地限制了其在电子设备中的发展。在这里，我们利用（001）面局部结构的相似性来实现高质量的外延生长${\mathrm{V}}_2{\mathrm{氧}}_3$4H-SiC 衬底上的薄膜。通过改变薄膜中的应变来诱导顺磁金属（PM）到顺磁绝缘体（PI）的转变发生，我们实现了巨大的电阻率变化（$\mathrm{\Delta }\mathrm{右}/\mathrm{右}=107500\%$） 在室温下。拉曼光谱结果表明，应变控制薄膜的电性能是通过增加/减少$A_{1G}$轨道占据，支持三角畸变的情况，其中PM-PI跃迁可以理解为由三角畸变的微小变化引起的轨道选择性MIT。在半导体衬底上外延生长并通过应变调节电性能的能力使得${\mathrm{V}}_2{\mathrm{氧}}_3/\text{4H碳化硅}$薄膜是探索和研究莫特器件的理想平台。