Abstract

Photosensitive semiconducting p-type tin(II) sulfide thin films with a band gap of 1.03 ± 0.09 eV have been manufactured in compliance with green chemistry principles using the one-pot approach. To extend the range of sulfidizers suitable for chemical deposition of thin nanostructured SnS films, the efficiency of using sodium thiosulfate solutions has been shown. It has been found that thin SnS films with good adhesion to a dielectric substrate and a coherent scattering region size of ⁓30 nm can be synthesized through hydrolytic decomposition of thiosulfate ions. The conditions for synthesis of SnS have been justified by thermodynamic analysis of ionic equilibria. Quantum-chemical calculations have shown that the p-type conductivity of the synthesized SnS films is most likely due to tin vacancies.

中文翻译：

---

低温一锅法合成硫化锡纳米晶薄膜

摘要

采用一锅法，按照绿色化学原理制备了带隙为 1.03 ± 0.09 eV 的光敏半导体p型硫化锡薄膜。为了扩大适合化学沉积纳米结构 SnS 薄膜的硫化剂范围，使用硫代硫酸钠溶液的效率已得到证明。研究发现，通过硫代硫酸根离子的水解可以合成对介电基板具有良好附着力且相干散射区域尺寸为⁓30 nm的SnS薄膜。SnS 的合成条件已通过离子平衡的热力学分析得到证实。量子化学计算表明，合成的 SnS 薄膜的 p 型导电率很可能是由于锡空位所致。