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Characterization of MoO3 and TixMoyOz Thin Films Prepared by Atomic Layer Deposition
Russian Journal of Inorganic Chemistry ( IF 2.1 ) Pub Date : 2024-03-11 , DOI: 10.1134/s003602362360274x
A. M. Maksumova , I. S. Bodalev , I. M. Abdulagatov , M. Kh. Rabadanov , A. I. Abdulagatov

Abstract

This work involves the ex situ characterization of molybdenum oxide (MoO3) and titanium molybdenum oxide (TixMoyOz) thin films grown by atomic layer deposition (ALD) at 150°C using titanium tetrachloride (TiCl4), molybdenum oxytetrachloride (MoOCl4), and water. Atomic layer deposition of TixMoyOz was carried out in supercycles consisting of TiCl4/H2O and MoOCl4/H2O subcycles. Two types of TixMoyOz films were prepared, where the ratio of subcycles was 1 : 1 (1Ti1MoO) and 1 : 7 (1Ti7MoO). The film growth rate was determined by spectroscopic ellipsometry (SE) and X-ray reflectivity (XRR). The density and root-mean-square roughness of the films were also determined from XRR. The composition of the films was determined by X-ray photoelectron spectroscopy (XPS). The degree of oxidation of molybdenum in the MoO3 and 1Ti7MoO films was +6, and in the 1Ti1MoO film, molybdenum was found in the oxidation states of +5 and +6. X-Ray diffraction analysis (XRD) showed that the films were amorphous.



中文翻译:

原子层沉积制备的 MoO3 和 TixMoyOz 薄膜的表征

摘要

这项工作涉及使用四氯化钛 (TiCl 4 )、四氯化钼通过原子层沉积 (ALD) 在 150°C 下生长的氧化钼 (MoO 3 ) 和钛钼氧化物 (Ti x Mo y O z )薄膜的异位表征(MoOCl 4 )和水。Ti x Mo y O z的原子层沉积在由TiCl 4 /H 2 O和MoOCl 4 /H 2 O子循环组成的超级循环中进行。制备了两种类型的 Ti x Mo y O z薄膜,其中子循环比例为 1:1 (1Ti1MoO) 和 1:7 (1Ti7MoO)。薄膜生长速率由光谱椭圆光度法(SE)和X射线反射率(XRR)测定。薄膜的密度和均方根粗糙度也由 XRR 测定。通过X射线光电子能谱(XPS)测定薄膜的组成。MoO 3和1Ti7MoO膜中钼的氧化态为+6,而在1Ti1MoO膜中,钼的氧化态为+5和+6。X射线衍射分析(XRD)表明薄膜是非晶态的。

更新日期:2024-03-11
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