Abstract

Oxygen-free ceramics are promising for use in various technologies owing to their unique properties. Additions of metals or metal compounds significantly expand the application range of the ceramics. Therefore, methods for the synthesis of such composites are being actively developed. One way to manufacture such films is chemical vapor deposition (CVD). Thermodynamic modeling offers a means to choose the process parameters. In this work, thermodynamic modeling of the CVD process in the Ni–Si–C–H system, where nickelocene and silane were precursors, was carried out. The results can be useful for film materials design based on SiC and nickel-containing phases.

中文翻译：

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Ni-Si-C-H 系统中 CVD 过程的热力学模型

摘要

无氧陶瓷由于其独特的性能而有望在各种技术中得到应用。金属或金属化合物的添加显着扩大了陶瓷的应用范围。因此，正在积极开发合成此类复合材料的方法。制造此类薄膜的一种方法是化学气相沉积（CVD）。热力学建模提供了一种选择过程参数的方法。在这项工作中，对 Ni-Si-C-H 系统中的 CVD 过程进行了热力学建模，其中二茂镍和硅烷是前体。研究结果可用于基于 SiC 和含镍相的薄膜材料设计。