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Hole Virtual Gate Model Explaining Surface-Related Dynamic R ON in p-GaN Power HEMTs
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-11 , DOI: 10.1109/led.2024.3375912 Nicolò Zagni 1 , Giovanni Verzellesi 2 , Alessandro Bertacchini 2 , Mattia Borgarino 1 , Ferdinando Iucolano 3 , Alessandro Chini 1
中文翻译:
孔虚拟栅极模型解释 p-GaN 功率 HEMT 中的表面相关动态 R ON
更新日期:2024-03-11
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-11 , DOI: 10.1109/led.2024.3375912 Nicolò Zagni 1 , Giovanni Verzellesi 2 , Alessandro Bertacchini 2 , Mattia Borgarino 1 , Ferdinando Iucolano 3 , Alessandro Chini 1
Affiliation
中文翻译:
孔虚拟栅极模型解释 p-GaN 功率 HEMT 中的表面相关动态 R ON