Abstract

The simulation results of the temperature distribution in the growth area of graphene layers obtained by the method of thermal decomposition of the silicon carbide surface substrates in setup with induction heating are presented. The heating parameters of the setup elements are calculated using the commercial package COMSOL Multiphysics taking into account the electrical, thermal and magnetic properties of the materials from which the growth plant elements are made. A numerical estimate of the heating inhomogeneity of silicon carbide plates over its area during the growth of graphene layers at a given temperature is given. It is shown that the lateral temperature distribution over the area of the plate has radial symmetry with decreasing values towards the center.

中文翻译：

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SiC衬底上石墨烯升华生长区的温度分布模拟

摘要

给出了通过感应加热装置中碳化硅表面衬底的热分解方法获得的石墨烯层生长区域的温度分布的模拟结果。设置元件的加热参数是使用商业软件包 COMSOL Multiphysics 计算的，同时考虑了制作生长植物元件的材料的电学、热学和磁学特性。给出了在给定温度下石墨烯层生长期间碳化硅板在其区域上的加热不均匀性的数值估计。结果表明，板区域上的横向温度分布具有径向对称性，且值朝中心递减。