Nowadays, cancer treatment with ion beam is well established and studied. This method allows to deposit the maximum dose to the tumor and minimize the damage to healthy tissue, due to the Bragg peak of the ion energy deposition near the end of the particle range. During the treatment, it is possible to provide volumetric dose delivery by changing the particle energy (penetration depth) and adjusting the beam position via a magnetic system. For the beam monitoring system, the precise measurement of the beam direction, shape and fluence in real time becomes crucial to provide effective and safe dose delivery to the tumor. Additionally, the system should work for beam intensities up to 10¹⁰ s^-1 for protons, be tolerant to 1 MeV neutron equivalent fluences up to 10¹⁵ cm^-2 per year and be to tolerant to magnetic fields (for MR-guided ion beam). The studies presented in this article are focused on the application of the HitPix sensor family with counting electronics and frame-based readout for such a beam monitoring system. The HitPix sensors are monolithic pixelated silicon sensors based on HV-CMOS technology and have been developed at the ASIC and Detector Lab (ADL, KIT). Recent measurements with ion beams and a multi-sensor readout as well as future developments are discussed.

中文翻译：

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用于治疗离子束束监测系统的单片 HV-CMOS 传感器

如今，离子束癌症治疗已得到很好的建立和研究。由于离子能量沉积的布拉格峰位于粒子范围末端附近，因此该方法可以向肿瘤沉积最大剂量，并最大限度地减少对健康组织的损害。在治疗过程中，可以通过改变粒子能量（穿透深度）并通过磁系统调整射束位置来提供体积剂量输送。对于射束监测系统来说，实时精确测量射束方向、形状和注量对于向肿瘤提供有效且安全的剂量输送至关重要。此外，该系统应适用于质子高达 10 ¹⁰ s ^-1的束流强度，能够耐受每年高达 10 ¹⁵ cm ^-2的 1 MeV 中子等效注量，并且能够耐受磁场（对于 MR 引导离子束） ）。本文介绍的研究重点是 HitPix 传感器系列在此类光束监测系统中的应用，该传感器具有计数电子器件和基于帧的读数。 HitPix 传感器是基于 HV-CMOS 技术的单片像素化硅传感器，由 ASIC 和探测器实验室（ADL、KIT）开发。讨论了最近使用离子束和多传感器读数进行的测量以及未来的发展。