The monoclinic β-polymorph of gallium oxide is a semiconductor with an ultra-wide bandgap. It is becoming increasingly significant for various technological applications. We have investigated the tracer self-diffusion of oxygen in β-Ga2O3 single crystals as a function of the oxygen partial pressure (2, 20 and 200 mbar) at a temperature of 1375 °C. Isotopically enriched 18O2 gas was used as a tracer source and secondary ion mass spectrometry to analyze depth profiles. We observed that, with decreasing oxygen partial pressure, the diffusivities at a given temperature increase significantly. We suggest that this behaviour can be explained by a change in the diffusion mechanism from oxygen interstitials to oxygen vacancies.

中文翻译：

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1375℃不同氧分压下β-Ga2O3单晶中的氧扩散

单斜晶系β-氧化镓的多晶型物是一种具有超宽带隙的半导体。它对于各种技术应用变得越来越重要。我们研究了氧的示踪自扩散β-Ga2氧3单晶在 1375 °C 温度下与氧分压（2、20 和 200 mbar）的函数关系。同位素富集18氧2使用气体作为示踪源和二次离子质谱来分析深度剖面。我们观察到，随着氧分压的降低，给定温度下的扩散率显着增加。我们认为这种行为可以通过从氧间隙到氧空位的扩散机制的变化来解释。