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Circuit complexity of quantum access models for encoding classical data npj Quantum Inform. (IF 7.6) Pub Date : 2024-04-23 Xiao-Ming Zhang, Xiao Yuan
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Reviving holographic photonic integration Nat. Photon. (IF 35.0) Pub Date : 2024-04-24 Daniel Brunner
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Nature-inspired miniaturized magnetic soft robotic swimmers Appl. Phys. Rev. (IF 15.0) Pub Date : 2024-04-24 R. Pramanik, R. W. C. P. Verstappen, P. R. Onck
State-of-the-art biomedical applications such as targeted drug delivery and laparoscopic surgery are extremely challenging because of the small length scales, the requirements of wireless manipulation, operational accuracy, and precise localization. In this regard, miniaturized magnetic soft robotic swimmers (MSRS) are attractive candidates since they offer a contactless mode of operation for precise
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Enhancing gas film stability by alternating superhydrophobic and hydrophobic surfaces for stable drag reduction Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Xiao Yao, Yi Yang, Guoqiang Li, Yuegan Song, Yuan Wang, Sensen Xuan, Huan Yin, Qinrui Zou, Hesong Ren, Xiaoxin Li, Xiaohong Li
Superhydrophobic surfaces can significantly reduce the resistance of underwater vehicles, but as the speed increases, the gas film is prone to be destroyed, leading to a decrease in the drag reduction effect or even an increase in the drag. Therefore, enhancing the stability of the gas film is crucial for maintaining the drag reduction effect. Inspired by the honeycomb array pit structures, the high
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Dual-comb interchanging absolute distance measurement with non-ambiguity range extension Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Xiaodong Shao, Hainian Han, Yu Yan, Junyi Ma, Chengzhi Li, Zhiyi Wei
We demonstrate a rapid and high-precision dual-comb ranging method with a significantly extended non-ambiguity range (NAR). By reasonably setting the polarization combining and splitting of two optical combs, we can obtain two sets of interferograms of signal comb and local oscillator comb interchanging simultaneously. This method allows us to extend the NAR to tens to hundreds of kilometers without
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Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Chunxu Su, Hong Zhou, Kun Zhang, Chenlu Wang, Sihan Sun, Hehe Gong, Jiandong Ye, Zhihong Liu, Kui Dang, Zheyuan Hu, Xiaodong Zhang, Jie Wei, Xiaorong Luo, Jincheng Zhang, Rong Zhang, Yue Hao
In this work, we propose combining a low work function anode metal and junction barrier Schottky structure to simultaneously achieve low turn-on voltage (Von) and high breakdown voltage (BV), which alleviates the dilemma that high BV requires high Schottky barrier height (SBH) and high Von. Molybdenum (Mo) is used to serve as the anode metal to reduce the SBH and facilitate fast turn-on to achieve
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Tolerance and breakdown of topological protection in a disordered waveguide Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Kiyanoush Goudarzi, Moonjoo Lee
We consider a disordered waveguide consisting of trivial dielectric and non-trivial magnetically anisotropic material. A topologically protected edge mode appears owing to the broken time-reversal symmetry of the non-trivial lattice. While the edge mode maintains under other position and radius disorders, the protection is immediately broken by applying a radius disorder to the non-trivial lattice
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Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Yayi Chen, Xingji Liu, Yuan Liu, Rongsheng Chen, Jianfeng Zhang, Mingchao Wu, Hoi-Sing Kwok, Wei Zhong
Source–drain contacts seriously affect low frequency noise (LFN) in amorphous IZO (a-IZO) thin-film transistors with bilayer ITO/Mo electrodes at cryogenic temperatures. In the range of 7–300 K, electrical and LFN performances of devices are measured, and the temperature dependence of channel resistances (Rch) and contact resistances (Rsd) is also analyzed. The carrier transport transition both occurs
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Dynamic tuning of moiré superlattice morphology by out-of-plane deformation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Guangfei Zhu, Rumeng Liu, Chun Tang, Lifeng Wang
The moiré superlattice structure has become a subject of intense interest due to its unique and intriguing properties. Key to the success of its applications is the precise manipulation of morphologies that determines the ultimate functionalities. To achieve such a goal is, however, very challenging. In this work, we present an approach for tuning moiré superlattices of suspended van der Waals structures
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Realization of high cryogenic thermoelectric performance for MgAgSb base alloy by regulation heat-treatment process Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Fanghong Qiu, Jun-Liang Chen, Yuntiao Liao, Zhongwei Zhang, Jisheng Liang, Lei Miao, Qi Zhou, Ying Peng, Chengyan Liu, Jie Gao
MgAgSb alloy has attracted wide attention due to its inherent low thermal conductivity, excellent thermoelectric (TE) properties, and environmental friendliness. Although the TE performance has been deeply investigated for the temperature range over 300–700 K, while cryogenic range has seldom report. In this study, a systematic investigation on cryogenic TE performance of α-MgAgSb has been performed
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High energy storage density in AgNbO3-based lead-free antiferroelectrics using A/B-site co-doping strategy Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 N. Zhang, J. R. Jiang, J. X. Zhang, J. Y. Wang, P. P. Jia, M. M. Zhu, Y. Y. Guo, S. Zhou, G. L. Song
Lead-free antiferroelectric AgNbO3 ceramics have garnered extensive attention due to their rapid charge/discharge capabilities and environmentally friendly nature, holding immense potential for energy storage applications. However, the practical utilization of AgNbO3 has been hindered by its low energy storage density. This study employed an A/B-site co-doping strategy, which yielded positive effects
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Phonon transport simulation with an extended VOF scheme for nano-structured thin film Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Yoshiya Takahara, Mitsuhiro Matsumoto, Misaki Hanaoka, Manabu Iwakawa
Control of phonon transport in solid devices is important for thermoelectric energy conversion and phononic crystal technology, and much attention has been paid to sub-micrometer or nanometer scale structures for that purpose. In order to investigate how various nano-structures affect the phonon transport, we have developed a numerical simulation code based on the Boltzmann transport equation of phonon
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Upscaling laboratory organic electronic sensor devices to roll-to-roll printing: The effect of printable electrodes on device operation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Daniel C. Elkington, Nathan A. Cooling, Swee-Lu Lim, Nguyen T. Trinh, Alaa Al-Ahmad, Tim Lewis, Kristofer L. Thompson, Riku Chowdhury, Warwick Belcher, Paul C. Dastoor
The prospect of large-scale production of low-cost electronic devices is a driving factor behind the recent interest in printed organic electronics. However, the upscaling of laboratory organic electronic devices is extremely challenging since it requires the adaptation of materials and fabrication processes optimized for the small scale to industrial manufacturing techniques, such as roll-to-roll
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True exponentially enhanced sensing in the non-Hermitian topological phase Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Rui Zhang, Tian Chen
Non-Hermitian systems have been employed to construct a high-sensitivity sensor. To evaluate the performance of the sensors, the quantum Fisher information per photon, or equivalently signal-to-noise ratio per photon, is provided as a “true” sensing criterion, which avoids the trivial contribution from the photon numbers. The specific properties of non-Hermitian systems, e.g., exceptional points and
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Primary dendrite growth within binary Fe71Ge29 eutectic alloy under duplex levitation states Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 N. S. Hou, D. L. Geng, Y. J. Jin, P. X. Yan, B. Wei
The primary β-Fe3Ge2 dendrite growth kinetics within liquid Fe71Ge29 eutectic alloy was studied by both acoustic levitation and electrostatic levitation techniques, with maximum experimental undercoolings of 130 and 143 K, respectively. At small undercoolings, (α1 + β-Fe3Ge2) eutectic growth proceeded and then transformed to lamellar (ε-Fe3Ge + β-Fe3Ge2) microstructure by peritectoid reaction. Once
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A synaptic transistor based on van der Waals heterojunction HfS2/HfOx/SnS2 with optical modulation properties Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Peijing Fang, Wenxin He, Yu Lin, Wenxing Lv, Zhipeng Yu, Like Zhang, Zishuo Han, Rongbin Zhan, Zhongming Zeng
Neuromorphic devices, which break the traditional von Neumann architecture, have attracted much attention for their ability to mimic the perception, learning, and memory functions of the human brain. Two-dimensional (2D) materials are excellent candidates for building neuromorphic devices due to their atomic-level thickness and excellent optoelectronic properties. In this work, we designed a nonvolatile
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Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Jianan Song, Anusmita Chakravorty, Miaomiao Jin, Rongming Chu
Physics-based 3D simulations were conducted on a GaN high-electron-mobility transistor (HEMT) and a super-heterojunction field-effect transistor (SHJFET) to investigate the single event effect mechanism under heavy ion irradiation. Most of the single event transient current in HEMT was attributed to the punch-through effect in the bulk caused by the local increase in electrostatic potential. With improved
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Quantum sensing of magnetic fields with molecular spins npj Quantum Inform. (IF 7.6) Pub Date : 2024-04-23 Claudio Bonizzoni, Alberto Ghirri, Fabio Santanni, Marco Affronte
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Observation of Landau levels and chiral edge states in photonic crystals through pseudomagnetic fields induced by synthetic strain Nat. Photon. (IF 35.0) Pub Date : 2024-04-23 René Barczyk, L. Kuipers, Ewold Verhagen
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Non-reciprocal band structures in an exciton–polariton Floquet optical lattice Nat. Photon. (IF 35.0) Pub Date : 2024-04-23 Yago del Valle Inclan Redondo, Xingran Xu, Timothy C. H. Liew, Elena A. Ostrovskaya, Alexander Stegmaier, Ronny Thomale, Christian Schneider, Siddhartha Dam, Sebastian Klembt, Sven Höfling, Seigo Tarucha, Michael D. Fraser
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Direct observation of Landau levels in silicon photonic crystals Nat. Photon. (IF 35.0) Pub Date : 2024-04-23 Maria Barsukova, Fabien Grisé, Zeyu Zhang, Sachin Vaidya, Jonathan Guglielmon, Michael I. Weinstein, Li He, Bo Zhen, Randall McEntaffer, Mikael C. Rechtsman
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Compact biologically inspired camera with computational compound eye Nanophotonics (IF 7.5) Pub Date : 2024-04-23 Shu-Bin Liu, Xu-Ning Liu, Wei-Jie Fan, Meng-Xuan Zhang, Lei Li
The growing interests have been witnessed in the evolution and improvement of artificial compound eyes (CE) inspired by arthropods. However, the existing CE cameras are suffering from a defocusing problem due to the incompatibility with commercial CMOS cameras. Inspired by the CEs of South American Shrimps, we report a compact biologically inspired camera that enables wide-field-of-view (FOV), high-resolution
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Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Yanghu Peng, Hui Guo, Ruiling Gong, Huaize Liu, Pengfei Shao, Na Sun, Fangfang Ren, Jiandong Ye, Youdou Zheng, Hai Lu, Rong Zhang, Dunjun Chen
In this work, fine carrier transport and recombination processes in p-NiO gate AlGaN/GaN high electron mobility transistors were investigated by analyzing their electroluminescence under forward gate bias, with photoluminescence spectrum as a reference. Red luminescence with a peak of 1.9 eV was captured when the gate bias voltage exceeded 4 V, which was verified to originate from the tunneling enhanced
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Optimizing Al content to eliminate the brittle phase in lightweight TiZrNbTa0.1Alx refractory high-entropy alloys Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Chen-Hao Xu, Hong Yu, Xuan Xiao, Jia-Wei Zhang, Wei-Bing Liao
Body-centered cubic (BCC) lightweight refractory high-entropy alloys (LWRHEAs) with Al contents have attracted much attention due to their low density and excellent mechanical properties. However, these typical lightweight alloys often suffer from poor room temperature plasticity. In this study, we prepared TiZrNbTa0.1Alx LWRHEAs by using a high-vacuum arc-melting technique and investigated the influence
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Fast relaxation of interlayer excitons from the free to self-trapped states in lead halide perovskite van der Waals heterostructures Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Jia-Pei Deng, Xin-Jun Ma, Shao-Juan Li, Zhi-Qing Li, Zi-Wu Wang
We study the thermal relaxation of interlayer excitons from the free to momentary self-trapped states in lead halide perovskite van der Waals heterostructures based on the well-known Huang-Rhys model. We find that these relaxation processes (self-trapped processes) are very fast ranging from nanoseconds to picoseconds. Moreover, the self-trapped time displays different variational trends by regulating
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Nanoscale single-electron box with a floating lead for quantum sensing: Modeling and device characterization Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 N. Petropoulos, X. Wu, A. Sokolov, P. Giounanlis, I. Bashir, A. K. Mitchell, M. Asker, D. Leipold, R. B. Staszewski, E. Blokhina
We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices. The device is analyzed and characterized in the context of single-electron charge sensing techniques for integrated silicon quantum dots (QD). The unique aspect of our SEB design is the incorporation of a metallic floating node, strategically employed for
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Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Jia Xu, Yu Zhang, Ying Ding, Yuhua Gong, Jianxi Yao
In this study, all-inorganic two-dimensional (2D) perovskite Cs2Pb(SCN)2Br2 was employed in a thin-film vertical structure prototype memristor. The device consisted of a Cs2Pb(SCN)2Br2 film prepared through solution approach, sandwiched between an Ag electrode and a TiO2/FTO substrate bottom electrode. Two types of resistive switching (RS) behaviors were observed within a single device at different
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Kerr-lens mode-locking of an Yb:SALLO laser generating 25 fs pulses at 1090 nm Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Zhang-Lang Lin, Huang-Jun Zeng, Zhongben Pan, Pavel Loiko, Valentin Petrov, Xavier Mateos, Ge Zhang, Weidong Chen
We report on the generation of sub-30 fs pulses from a Kerr-lens mode-locked ytterbium solid-state laser based on a disordered Yb:SrLaAlO4 (Yb:SALLO) crystal as a gain medium. The Yb:SALLO laser, pumped by a spatially single-mode Yb-fiber laser at 979 nm, produces soliton pulses as short as 25 fs at 1090 nm, with an average output power of 149 mW at a pulse repetition rate of ∼80.7 MHz. The power scaling
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Violation of the Cauchy–Born rule in multi-principal element alloys Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Swarnava Ghosh
Multi-principal element alloys are a novel class of materials that are formed by combining multiple elements in high concentrations and show exceptional properties compared to conventional alloys. These alloys have high configurational entropy due to inherent atomic disorder. The Cauchy–Born rule is a popular homogenization method for linking atomistic to continuum length scales. In this Letter, we
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Femtosecond laser structured black superhydrophobic cork for efficient solar-driven cleanup of crude oil Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Yuchun He, Kai Yin, Lingxiao Wang, Tingni Wu, Yu Chen, Christopher J. Arnusch
Marine oil spills have become a major global environmental challenge, yet there remains a lack of effective and environmentally friendly strategies for the remediation of water contaminated with high-viscosity oil. In this study, we introduce a superhydrophobic oleophilic material with photothermal properties for efficient absorption of viscous oil. Femtosecond laser treatment methodology is applied
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Continuous-variable quantum key distribution over 28.6 km fiber with an integrated silicon photonic receiver chip Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Yiming Bian, Yan Pan, Xuesong Xu, Liang Zhao, Yang Li, Wei Huang, Lei Zhang, Song Yu, Yichen Zhang, Bingjie Xu
Quantum key distribution, which ensures information-theoretically secret key generation, is currently advancing through photonic integration to achieve high performance, cost reduction, and compact size, thereby facilitating the large-scale deployment. Continuous-variable quantum key distribution is an attractive approach for photonic integrations due to its compatibility with off-the-shelf optical
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Asymmetric thermal optofluidics based on plasmonic multilayered nanostructures Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Zhimin Jing, Cuiping Ma, Peihang Li, Peng Yu, Arup Neogi, Zhiming Wang
Manipulating thermo-convective fluid flow induced by plasmonic nanostructures under light illumination has garnered significant attention in various fields, such as biomedical sensing, particle trapping, and drug delivery. However, achieving symmetric optical manipulation of fluid flow encounters challenges in certain applications due to the inherent temporal and spatial symmetry in the energy transfer
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Excitation and dynamics of spin solitons in chiral magnetization configuration Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Abir Shadman, Jian-Gang (Jimmy) Zhu
This research paper presents systematic micromagnetic modeling of dynamic spin solitons carried by perpendicular magnetization component on a topologically preserved chiral sequence of uniform 360° in-plane domain walls with fixed boundaries in a strip. The long, narrow strip of a soft, magnetic thin film has a repeated in-plane magnetization pattern such that the local magnetization will rotate uniformly
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High-entropy layer assisting quasi-zero-strain cathodes for P2-Na2/3Ni1/3Mn2/3O2 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Shuwei Sun, Ying Bai
Layered transition metal oxides have attracted much attention for high-energy density sodium ion batteries. However, most P2-type layered oxides undergo a large volume change when they are charged at a deep desodiated state, accompanied by inevitable anisotropic stress, leading to poor structural stability and terrible ion transfer. In this work, a high entropy (HE) material with a robust structure
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Anomalous thermal transport and high thermoelectric performance of Cu-based vanadate CuVO3 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Xin Jin, Qiling Ou, Haoran Wei, Xianyong Ding, Fangyang Zhan, Rui Wang, Xiaolong Yang, Xuewei Lv, Peng Yu
Thermoelectric (TE) conversion technology, capable of transforming heat into electricity, is critical for sustainable energy solutions. Many promising TE materials contain rare or toxic elements, so the development of cost-effective and eco-friendly high-performance TE materials is highly urgent. Herein, we explore the thermal transport and TE properties of transition metal vanadate CuVO3 by using
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Dual-polarization small-angle strong nonreciprocal thermal radiator with Weyl semimetal Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Jimin Fang, Jiaqi Zou, Tingyu Liu, Manzhuo Wang, Xiaoqiang Sun, Yuanda Wu, Daming Zhang
The development of dual-polarization irreversible radiators that can operate without external magnetic field is an arduous task. To avoid the need of strong magnetic field, a dual-polarization nonreciprocal thermal radiator with the introduction of Weyl semimetal is demonstrated. It consists of cross-shaped silicon nanopores, Weyl semimetal, and Ag reflective layer. The simulation results show that
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Coherent light-emitting metasurfaces based on bound states in the continuum Nanophotonics (IF 7.5) Pub Date : 2024-04-22 Soheil Farazi, Srinivas Tadigadapa
An emergent need exists for solid state tunable coherent light emitters in the mid-infrared range for spectroscopy, sensing, and communication applications where current light sources are dominated by spontaneous emitters. This paper demonstrates a distinct class of coherent thermal emitters operating in the mid-infrared wavelength regime. The structure of the light source consists of a dielectric
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Electron mobility of SnO2 from first principles Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Amanda Wang, Kyle Bushick, Nick Pant, Woncheol Lee, Xiao Zhang, Joshua Leveillee, Feliciano Giustino, Samuel Poncé, Emmanouil Kioupakis
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the temperature
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Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Qingyun Xie, John Niroula, Nitul S. Rajput, Mengyang Yuan, Shisong Luo, Kai Fu, Mohamed Fadil Isamotu, Rafid Hassan Palash, Bejoy Sikder, Savannah R. Eisner, Harshad Surdi, Aidan J. Belanger, Patrick K. Darmawi-Iskandar, Zlatan Aksamija, Robert J. Nemanich, Stephen M. Goodnick, Debbie G. Senesky, Gary W. Hunter, Nadim Chowdhury, Yuji Zhao, Tomás Palacios
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms
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Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Xiaohu Wang, Xuefeng Zheng, Danmei Lin, Hao Zhang, Yanrong Cao, Ling Lv, Yingzhe Wang, Peipei Hu, Jie Liu, Xiaohua Ma, Yue Hao
In this work, the single-event burnout (SEB) mechanism of p-GaN gate AlGaN/GaN HEMTs has been studied systematically. The irradiation experiment was carried out based on Ta ions with high linear energy transfer of 75.4 MeV/(mg/cm2), a standard criterion for commercial space applications. It is clearly observed that both the drain current and gate current increase during the irradiation. With the increasing
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Photoinduced shortening of metallic bond in 1T′-ReS2 revealed by femtosecond electron diffraction Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Jingjun Li, Luye Yue, Zijing Chen, Dao Xiang, Jianming Cao
Rhenium disulfide with a distorted crystal structure has recently attracted tremendous attention for its excitonic and highly anisotropic properties. While ultrafast spectroscopies have extensively probed the carrier response to photoexcitation, the associated lattice response has remained elusive. In this study, we utilize MeV femtosecond electron diffraction to unravel the intricate dynamics of lattice
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Fluorite-structured high-entropy oxide sputtered thin films from bixbyite target Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 George N. Kotsonis, Saeed S. I. Almishal, Leixin Miao, Mary Kathleen Caucci, Gerald R. Bejger, Sai Venkata Gayathri Ayyagari, Tyler W. Valentine, Billy E. Yang, Susan B. Sinnott, Christina M. Rost, Nasim Alem, Jon-Paul Maria
The prototype high-entropy oxide (HEO) Y0.2La0.2Ce0.2Pr0.2Sm0.2O2−δ represents a particularly complex class of HEOs with significant anion sublattice entropy. The system takes either a fluorite or bixbyite-type crystal structure, depending on synthesis kinetics and thermal history. Here, we synthesize bulk ceramics and epitaxial thin films of Y0.2La0.2Ce0.2Pr0.2Sm0.2O2−δ and use diffraction to explore
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Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Tanay Tak, Alejandro Quevedo, Feng Wu, Srinivas Gandrothula, Jacob J. Ewing, Stephen Gee, Shuji Nakamura, Steven P. DenBaars, James S. Speck
The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects
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Propagon boundary scattering relaxed via crystalline host on multiphase germanium telluride Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Brian F. Donovan, Ronald J. Warzoha, Taylor L. Gray, Elizabeth Getto, Asher Leff, Adam A. Wilson, Laura B. Ruppalt, James G. Champlain
The movement of heat through amorphous solids on an atomic level remains an outstanding question. Recent studies suggest that the primary thermal carrier in amorphous materials, propagons, essentially behaves like phonons. In this work, we provide experimental evidence that shows the interaction between propagons and phonons by utilizing the phase change chalcogenide germanium telluride. A series of
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Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Xinghuan Chen, Zhiyuan He, Yijun Shi, Zeheng Wang, Fangzhou Wang, Ruize Sun, Yiqiang Chen, Yuan Chen, Liang He, Guoguang Lu, Wanjun Chen, Chao Liu, Bo Zhang
In this Letter, we investigate the threshold voltage (VTH) instability of Schottky p-GaN gate high electron mobility transistors (SP-HEMTs) under high-frequency operation by a resistive-load hard switching method. The abnormal VTH instability is observed, which is different between fully and partially depleted SP-HEMTs (FD- and PD-HEMTs). Notably, for FD-HEMT, VTH shifts positively with effective stress
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Meander-gated dual cap GaN HEMT-based portable noninvasive COVID-19 detection platform Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Rajiv Ranjan Thakur, Anil Kumar Saini, Rajeev Taliyan, Nidhi Chaturvedi
In this Letter, an epitaxial and device design has been proposed for the noninvasive detection of COVID-19 using a portable hand-held system. A ∼1.5-fold enhancement in sensitivity was observed for the meander-gated biosensor as compared to the conventional design. The sensitivity was further enhanced by ∼1.70 times when a dual cap layer was used instead of a conventional epitaxial design. A peak sensitivity
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Low-noise inverse magnetoelectric magnetic field sensor Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 L. Thormählen, P. Hayes, E. Elzenheimer, E. Spetzler, G. Schmidt, M. Höft, J. McCord, D. Meyners, E. Quandt
In the development of any type of magnetic field sensor based on magnetic films, special consideration must be given to the magnetic layer component. The presented work investigates the use of scalable flux closing magnetostrictive multilayers for inverse magnetoelectric sensors. In such a type of magnetic field sensor, highly sensitive AC and DC field detection relies on strong excitation of the incorporated
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Demonstration of high-impedance superconducting NbRe Dayem bridges Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 S. Battisti, J. Koch, A. Paghi, L. Ruf, A. Gulian, S. Teknowijoyo, C. Cirillo, Z. Makhdoumi Kakhaki, C. Attanasio, E. Scheer, A. Di Bernardo, G. De Simoni, F. Giazotto
Here, we demonstrate superconducting Dayem-bridge weak-links made of different stoichiometric compositions of NbRe. Our devices possess a relatively high critical temperature, normal-state resistance, and kinetic inductance. In particular, the high kinetic inductance makes this material a good alternative to more conventional niobium-based superconductors (e.g., NbN or NbTiN) for the realization of
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Interfacial second harmonic generation switching with 2D monolayer/VO2 heterostructure Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Yuanyuan Li, Tianjie Wang, Liang Li, Min Wang, Jiaxin Xie, Jianhua Chang, Chongwen Zou, Zeming Qi, Qiannan Cui
To establish a facile nonlinear optical switching mechanism activated by thermal field, that is compatible with on-chip integration, we develop a physical model to quantify the interfacial second harmonic generation (SHG) of 2D monolayer/3D phase-changing material heterostructure. Our results show that heat-induced phase transition of VO2 can realize temperature-reversible interfacial SHG switching
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Optimal design of fast adiabatic topological pumping in modulated lattices Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Xianggui Ding, Zongliang Du, Jiachen Luo, Hui Chen, Zhenqun Guan, Xu Guo
Utilizing synthetic dimensions generated by spatial or temporal modulation, topological pumping enables the exploration of higher-dimensional topological phenomena through lower-dimensional physical systems. In this Letter, we propose a rational design paradigm of fast adiabatic topological pumping based on 1D and 2D time-modulated discrete elastic lattices. First, the realization of topological pumping
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Direct laser patterning of ruthenium below the optical diffraction limit Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Lorenzo Cruciani, Marnix Vreugdenhil, Stefan van Vliet, Ester Abram, Dries van Oosten, Roland Bliem, Klaasjan van Druten, Paul Planken
We describe a method that can be used to produce ruthenium/ruthenium oxide patterns starting from a ruthenium thin film. The method is based on highly localized oxidation of a small surface area of a ruthenium film by means of exposure to a pulsed laser under ambient conditions. Laser exposure is followed by dissolution of the un-exposed ruthenium in a NaClO solution, which leaves the conductive, partially
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Chemical short-range order enhances fracture toughness of medium entropy alloy CoCrNi Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Wu-Rong Jian, Shuozhi Xu, Dengke Chen, Irene J. Beyerlein
Using hybrid molecular dynamics and Monte Carlo simulations, we examine the role of lattice distortion (LD) and chemical short-range ordering (CSRO) on the development of defects ahead of a mode I crack in medium entropy alloy CoCrNi. We show that CSRO noticeably increases fracture toughness. The result can be explained by the effect of CSRO on lowering LD and increasing intrinsic stacking fault energy
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Controllable memory window in two-dimensional hybrid van der Waals heterostructured devices Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Huijuan Zhao, Jingxuan Ma, Shuhan Li, Yang Yang, Zhangxia Wang, Zhongzhong Luo, Xiaohan Guo, Bing Luo, Li Zhu, Lianhui Wang, Li Gao
Van der Waals (vdW) heterostructures based on inorganic layered materials have been demonstrated as potential candidates for a variety of electronic applications due to their flexibility in energy band engineering. However, the presence of unstable charge-trapping states in atomically thin two-dimensional (2D) materials may limit the performance of devices. Here, we aim to conduct a systematic investigation
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Anomalous Hall effect in 5d/5d SrTaO3/SrIrO3 superlattices driven by ferromagnetism and spin–orbit coupling Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Xiaoyu Zhang, Zhentao Pang, Yi-Chi Li, Mingyuan Yan, Yang-Yang Lv, Yu Deng, Shan-Tao Zhang
The observation of the anomalous Hall effect (AHE) in 5d perovskite oxides has been challenging due to their lack or weak ferromagnetic order, which is necessary for breaking time-reversal symmetry. Here, we present compelling evidence of ferromagnetism and consequent AHE in a series of carefully designed and fabricated 5d/5d SrTaO3/SrIrO3 (STO/SIO) superlattices. The coexistence of Ta5+ and Ta4+ chemical
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Acceleration mechanisms of energetic ion debris in laser-driven tin plasma EUV sources Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 S. R. Totorica, K. Lezhnin, D. J. Hemminga, J. Gonzalez, J. Sheil, A. Diallo, A. Hyder, W. Fox
Laser-driven tin plasmas are driving new-generation nanolithography as sources of extreme ultraviolet (EUV) radiation centered at 13.5 nm. A major challenge facing industrial EUV source development is predicting energetic ion debris produced during the plasma expansion that may damage the sensitive EUV channeling multilayer optics. Gaining a detailed understanding of the plasma dynamics and ion acceleration
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Cooperatively tuning magnetic anisotropy and colossal magnetoresistance via atomic-scale buffer layers in highly strained La0.7Sr0.3MnO3 films Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Sheng Li, Zengxing Lu, Bin Lao, Xuan Zheng, Guoxin Chen, Run-Wei Li, Zhiming Wang
Achieving simultaneous control over multiple functional properties, such as magnetic anisotropy, magnetoresistance, and metal-insulator transition, with atomic precision remains a major challenge for realizing advanced spintronic functionalities. Here, we demonstrate a unique approach to cooperatively tune these multiple functional properties in highly strained La0.7Sr0.3MnO3 (LSMO) thin films. By
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Negatively charged boron-vacancy defect in hexagonal boron nitride nanoparticles Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Yahya A. Alzahrani, Masfer Alkahtani
Fluorescent defects in two-dimensional (2D) hexagonal boron nitride (hBN) crystals have attracted a great potential in quantum information and sensing technologies. In particular, the negatively charged boron vacancy (VB−) center has shown spin-dependent fluorescence in 2D flakes or large hBN crystals, which can be manipulated at room temperature, enhancing the application scope of hBN in quantum technologies
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Nonlinear binary indium-tin-oxide terahertz emitters with complete phase and amplitude control Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Xi Feng, Xueqian Zhang, Haidi Qiu, Quan Xu, Weili Zhang, Jiaguang Han
Terahertz (THz) waves have demonstrated immense potential for various applications in multiple fields. To enable the development of compact THz applications, it is crucial to integrate THz emission and wavefront manipulation into a single device. This study proposes and experiments with a nonlinear binary THz emitter that utilizes a patterned indium-tin-oxide (ITO) film. By precisely controlling the
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The determination of WSe2/GaN heterojunction band offsets in the semipolar (11–22) and nonpolar (11–20) planes by x-ray photoelectron spectroscopy Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Wanting Wei, Guijuan Zhao, Xiurui Lv, Xingliang Wang, Guipeng Liu
Wurtzite structured GaN has a severe polarization effect in the c (0001) plane, compared to which the polarization effect is small in the semipolar (11–22) plane, and there is no polarization effect in the nonpolar (11–20) plane GaN. To investigate the influence of the polarization effect on the band bending at the heterojunction interface, we fabricated tungsten diselenide (WSe2)/(0001) GaN, WSe2/(11–22)
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Temperature-dependent anisotropy variation in quasi-two-dimensional ferromagnetic Cr5Te8 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Aina Wang, Azizur Rahman, Zan Du, Wei Liu, Jingxin Li, Jiyu Fan, Chunlan Ma, Min Ge, Li Pi, Yuheng Zhang, Lei Zhang
The quasi-two-dimensional ferromagnet Cr5Te8 is a promising material for spintronic devices due to its near-room-temperature Curie temperature (TC), strong magnetic anisotropy, and easily controllable properties. In this study, the anisotropic magnetization of trigonal (T-) Cr5Te8 single crystals is investigated. Our magnetization study reveals that a ferromagnetic transition occurs when the magnetic