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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress IEEE Open J. Nanotechnol. Pub Date : 2024-04-08 Muhammad Aslam, Min-Hui Chuang, Shu-Wei Chang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li
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IEEE Open Journal of Nanotechnology Information for Authors IEEE Open J. Nanotechnol. Pub Date : 2024-03-06
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Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime IEEE Open J. Nanotechnol. Pub Date : 2024-02-13 Asisa Kumar Panigrahy, Sudheer Hanumanthakari, Shridhar B. Devamane, Shruti Bhargava Choubey, M. Prasad, D. Somasundaram, N. Kumareshan, N. Arun Vignesh, Gnanasaravanan Subramaniam, Durga Prakash M, Raghunandan Swain
This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO 2 and HfO 2 , each having a thickness of 1 nm. The performance of both the classical and quantum models of the GAA nanosheet device is evaluated using the visual TCAD tool, which
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2023 Index IEEE Open Journal of Nanotechnology Vol. 4 IEEE Open J. Nanotechnol. Pub Date : 2024-02-08
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Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors IEEE Open J. Nanotechnol. Pub Date : 2023-11-28 Sekhar Reddy Kola, Yiming Li
Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking n -FET on
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Impact of Specific PM2.5 Contaminant on Monolayer/Bilayer ArGNR IEEE Open J. Nanotechnol. Pub Date : 2023-11-24 Kamal Solanki, Swati Verma, Punya Prasanna Paltani, Manoj Kumar Majumder
Elevated Particular Matter (PM 2.5 ) may increase the risk of acquiring hazardous health implications, and hence high-performance monitoring of minuscule contaminants might protect people's health. The adsorption behaviour of specific PM 2.5 contaminants on doped/undoped monolayer/bilayer armchair graphene nanoribbon (ArGNR) is analyzed using a hydrogen-passivated layer. By using the first-principles
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Observations of Aharonov-Bohm Conductance Oscillations in CVD-Grown Graphene Rings at 4K IEEE Open J. Nanotechnol. Pub Date : 2023-11-10 Zitao Tang, Siwei Chen, Cynthia I. Osuala, Abdus Salam Sarkar, Grzegorz Hader, Aron Cummings, Stefan Strauf, Chunlei Qu, Eui-Hyeok Yang
We present the observations of Aharonov-Bohm (AB) oscillations in chemical vapor deposition (CVD)-grown graphene rings via magnetotransport measurements at 4K under out-of-plane external magnetic fields up to +/−2.1 T. Incorporating a baseline subtraction of the original conductance data allowed us to observe two-terminal conductance oscillations with a spacing of ΔB AB of 3.66 to 32.9 mT from the
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A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors IEEE Open J. Nanotechnol. Pub Date : 2023-10-30 Rajat Butola, Yiming Li, Sekhar Reddy Kola
Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domain. One major advantage of ML-based compact modeling is its ability to capture complex relationships and patterns in large datasets. Therefore, in this paper a novel design scheme based on dynamically adaptive neural network (DANN) is proposed to develop fast
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Sputtering Deposition With Low Cost Multi-Element Powder Targets IEEE Open J. Nanotechnol. Pub Date : 2023-10-27 Tamiko Ohshima
Compared to solid target, powder target is low cost and can be varied in wide range of elemental combinations. Transparent and conductive aluminum-doped zinc oxide (AZO) thin films were prepared by sputter deposition using a mixed powder target consisting of zinc oxide and aluminum oxide powders at 98:2 wt%. The bulk density of the powder target can be varied depending on the pressing pressure. Therefore
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Design, Fabrication and Measurement of Radio Frequency Micro-Electro-Mechanical Systems IEEE Open J. Nanotechnol. Pub Date : 2023-10-03 Girija Sravani Kondavitee, Young Suh Song, Srinivasa Rao Karumuri, Koushik Guha, Brajesh Kumar Kaushik, Aimé Lay-Ekuakille
This article describes the fabrication and experimental results of a novel step structure Radio Frequency Microelectromechanical system (RF MEMS) switch integrated with a circular patch antenna. The RF MEMS switch is developed using surface micromachining technology and exhibits several desirable characteristics. The key findings and features of the proposed RF MEMS switch are as follows: The switch
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Magnetic Landau Quantization Effects on the Magnetic Moment and Specific Heat of a T-3 Dice Lattice IEEE Open J. Nanotechnol. Pub Date : 2023-09-27 Norman J. M. Horing, M. L. Glasser
In this work we analyze the statistical thermodynamic functions and magnetic moment of a Dice lattice subject to a normal quantizing magnetic field. Our analysis addresses the Grand Potential and Helmholtz Free Energy, as well as the magnetic moment, entropy and specific heat at constant volume, explicitly determining their magnetic field dependencies in the degenerate statistical regime, replete with
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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing IEEE Open J. Nanotechnol. Pub Date : 2023-08-17 Yi-Ho Chen, Daisuke Ohori, Muhammad Aslam, Yao-Jen Lee, Yiming Li, Seiji Samukawa
This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (V th ) of
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Tailoring by AgNPs of the Energetics of Charge Carriers in Electrically Insulating Polymers at the Electrode/Dielectric Contact IEEE Open J. Nanotechnol. Pub Date : 2023-06-08 Kremena Makasheva, Christina Villeneuve-Faure, Adriana Scarangella, Luca Montanari, Laurent Boudou, Gilbert Teyssedre
The ever increasing field of application of nanodielectrics in electrical insulations calls for description of the mechanisms underlying the performance of these systems and for identification of the signs exposing their aging under high electric fields. Such approach is of particular interest to electrically insulating polymers because their chemical defects are of deleterious nature for their electrical
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Magnetic Nanoparticles Mediated Thrombolysis–A Review IEEE Open J. Nanotechnol. Pub Date : 2023-05-08 Bohua Zhang, Xiaoning Jiang
Nanoparticles containing thrombolytic medicines have been developed for thrombolysis applications in response to the increasing demand for effective, targeted treatment of thrombosis disease. In recent years, there has been a great deal of interest in nanoparticles that can be navigated and driven by a magnetic field. However, there are few review publications concerning the application of magnetic
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Energy Efficient Spin-Based Implementation of Neuromorphic Functions in CNNs IEEE Open J. Nanotechnol. Pub Date : 2023-03-27 Sandeep Soni, Gaurav Verma, Hemkant Nehete, Brajesh Kumar Kaushik
Convolutional neural networks (CNNs) offer potentially a better accuracy alternative for conventional deep learning tasks. The hardware implementation of CNN functionalities with conventional CMOS based devices still lags in area and energy efficiency. This has necessitated the investigations of unconventional devices, circuits, and architectures to efficiently mimic the functionality of neurons and
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Metallic CNT Tolerant Field Effect Transistor Using Dielectrophoresis IEEE Open J. Nanotechnol. Pub Date : 2023-03-13 Shobhit Kareer, Jeongwon Park
The performance of silicon-based transistors is reaching its limit, and new materials like carbon nanotubes (CNTs) have started emerging to replace them in electronic products. However, the precise manipulation of CNTs requires complicated techniques, which increases process variation. These variations can lead to a decrease in the overall yield of the field-effect transistor (FET). This study shows
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Guest Editorial: Materials & Devices for Advanced Flexible Sensors IEEE Open J. Nanotechnol. Pub Date : 2023-02-03 Yu Xinge
The papers in this special section focus on materials and devices for flexible sensors. Presents recent advances in skin electronics, touch sensors for flexible display, near-infrared spectroscopy (NIRS) and organic electrochemical transistors (OECT), respectively. Three research article introduces new methods in flexible pressure sensing array, ammonia sensors and charge plasma junctionless tunnel
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Front Cover IEEE Open J. Nanotechnol. Pub Date : 2023-01-10
Presents the front cover for this issue of the publication.
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Dirac Materials and an Identity for the Grand Potential of the Nondegenerate Statistical Thermodynamic Regime IEEE Open J. Nanotechnol. Pub Date : 2023-01-10 NORMAN J. M. HORING
We examine the question “Can Dirac materials exist in a nondegenerate statistical state?,” deriving and employing an identity for the thermodynamic Grand Potential $\Omega$ (per unit volume/area) in the low density nondegenerate statistical regime, relating it to the density $n$ as $\Omega = -\beta ^{-1} n$ ( $\beta ^{-1} = \kappa _{B} T$ is thermal energy, $\kappa _{B}$ is the Boltzmann constant,
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Greenhouse Gas Detection Based on Infrared Nanophotonic Devices IEEE Open J. Nanotechnol. Pub Date : 2023-01-06 Chunhui Hao, Xiao Fu, Xiaoyong Jiang, Yutong Li, Juyi Sun, Haitao Wu, He Zhu, Qing Li, Yunhai Li, Zhangcheng Huang, Fang Zhong, Ting He, Jinshui Miao, Weida Hu
Most greenhouse gases come from biological activities and industry which will lead to global warming and show an impact on human life. With the need of green transformation of the global economic structure and seeking for higher quality of human life, the detection and management of greenhouse gases, as well as most hazardous gases in the environment, are increasingly demanding. Applications in different
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Guest Editorial: Nanopackaging Part II IEEE Open J. Nanotechnol. Pub Date : 2022-12-23 Attila Bonyar, Brajesh Kumar Kaushik, James E. Morris, Markondeyaraj Pulugurtha
The papers in this special section focus on nanopackaging. It begins with three reviews of diverse nanoscale technologies and then moves on to research papers focused primarily on nanomaterials for on-chip interconnect and noise abatement.
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Modelling, Fabrication and Testing of RF Micro-Electro-Mechanical-Systems Switch IEEE Open J. Nanotechnol. Pub Date : 2022-12-26 Srinivasa Rao Karumuri, P. Ashok Kumar, Girija Sravani Kondavitee, Aime Lay-Ekuakille
This paper presents an approach to evaluate capacitance developed by perforated membrane of RF MEMS switch with high accuracy. An analytical model is developed for both upstate and downstate of switch by including parasitic and fringing field capacitance in parallel plate capacitance model. The proposed analytical model includes the ligament efficiency term directly in the formula which reduce the
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Transition Metal Doped Bismuthene and Mn-Bi/CrI3 Heterostructure for High Anisotropy Energy and Half-Metallicity IEEE Open J. Nanotechnol. Pub Date : 2022-12-22 Shipra Saini, Namita Bindal, Brajesh Kumar Kaushik
Magnetic anisotropy energy (MAE) of two-dimensional (2D) magnetic materials is the key parameter for designing next-generation spintronic devices. Here, using first-principle calculations based on density functional theory (DFT), the variance in MAE and other magnetic properties is observed for transition metal (TM) doped bismuth monolayer (bismuthene). This doped system shows a significant modulation
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Guest Editorial: Emerging Plasma Nanotechnologies IEEE Open J. Nanotechnol. Pub Date : 2022-12-14 Masaharu Shiratani, John P. Verboncoeur, Jong-Shinn Wu
The papers in this special section shed light on recent progresses on nanoscience and nanotechnology based on low pressure plasma and atmospheric plasma, whereas it also suggests directions for future research.
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Recent Advances and Design Strategies Towards Wearable Near-Infrared Spectroscopy IEEE Open J. Nanotechnol. Pub Date : 2022-12-05 Shuoyan Liu, Bing Xue, Wenyuan Yan, Alina Y. Rwei, Changsheng Wu
With a growing focus on properties of softness, miniaturization, and intelligence, extensive research has been focusing on constructing wearable electronic devices facilitating comfort, wearable health monitoring and diagnosis. Among recent progress in the development of wearable bioelectronics, wearable near-infrared spectroscopy (NIRS) devices demonstrate wide implementation possibilities in multiple
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Methodology for Automated Design of Quantum-Dot Cellular Automata Circuits IEEE Open J. Nanotechnol. Pub Date : 2022-12-02 Orestis Liolis, Vassilios A. Mardiris, Ioannis G. Karafyllidis, Sorin Cotofana, Georgios Ch. Sirakoulis
Quantum-dot Cellular Automata (QCA) provide very high scale integration potential, very high switching frequency, and have extremely low power demands, which make the QCA technology quite attractive for the design and implementation of large-scale, high-performance nanoelectronic circuits. However, state-of-the-art QCA circuit designs were not derived by following a set of universal design rules, as
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Recent Advances in Touch Sensors for Flexible Displays IEEE Open J. Nanotechnol. Pub Date : 2022-11-25 Chenglan Ouyang, Di Liu, Ke He, Jiahao Kang
A touch screen that combines a display and a touch sensor array is a critical component enabling human-machine interaction. The progress made in flexible touch screen technologies also vigorously drives the development and application of flexible electronics in various fields. Over the past decade, there have been enormous research and development efforts on new structures and materials for touch sensors
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Design and Parametric Analysis of Charge Plasma Junctionless TFET for Biosensor Applications IEEE Open J. Nanotechnol. Pub Date : 2022-11-24 D Manaswi, Srinivasa Rao Karumuri, Girish Wadhwa
This paper presents a new design of charge plasma junctionless tunnel field effect transistor (CP JLTFET) with improved ON current, surface potentials. For the ease of fabrication, source and drain regions are induced in intrinsic silicon material using proper metal workfunctions. The rate of tunneling of electrons is found more in case of proposed CP JLTFET. The cavity length is varied between 8 nm
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Large-Scale Optimization of Decoupling Capacitors Using Adaptive Region Based Encoding Scheme in Particle Swarm Optimization IEEE Open J. Nanotechnol. Pub Date : 2022-11-23 DINESH JUNJARIYA, JAI NARAYAN TRIPATHI
Power delivery networks are responsible for supplying clean power to the integrated circuits. Power supply noise plays a critical role in determining the performance of high-speed very large scale integration circuits and systems. In order to maintain power integrity in high-speed systems, decoupling capacitors are used to maintain low impedance of the PDN to eventually minimize power supply noise
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Additive Manufacturing for Nano-Feature Applications: Electrohydrodynamic Printing as a Next-Generation Enabling Technology IEEE Open J. Nanotechnol. Pub Date : 2022-11-23 Goran Miskovic, Robin Kaufhold
Regardless of the technology, additive or subtractive, the miniaturization trend is constantly pushing for smaller resolutions. The rise of global challenges in material availability, fabrication in three dimensions (3D), design flexibility and rapid prototyping have pushed additive manufacturing (AM) into the spotlight. Addressing the miniaturization trend, AM has already successfully answered the
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Review of Plasma Technologies for Contribution of Environmental Purification IEEE Open J. Nanotechnol. Pub Date : 2022-11-23 Kuniko Urashima
Since the beginning of the 20th century, plasma technology has been used in a variety of fields. In the 1980s, R&D related to arc plasma welding and waste disposal, as well as etching, painting, and gas removal equipment that used plasma technology in the processes associated with semiconductor manufacturing. In the 1990s, research on removing air pollutants using atmospheric pressure plasma technology
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Droplet-Dispensed Graphene Oxide as Capacitive Sensing Elements for Flexible Pressure-Pulse Sensing Array IEEE Open J. Nanotechnol. Pub Date : 2022-11-21 Ka Wai Kong, Keer Wang, Alice Yeuk Lan Leung, Hongyu Zhang, Jiao Suo, Meng Chen, Guanglie Zhang, Fei Fei, Jiangang Shen, Wen Jung Li
We report a novel flexible capacitive pressure-pulse sensor array developed by integrating droplet-dispensed graphene oxide (GO) sensing elements and flexible electronics. The utilization of droplet-dispensing technology enables the fabrication multiple capacitive sensing elements rapidly while producing sensitive pressure sensors with excellent repeatability. The dispensed droplet volume (GO aqueous
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Graphene Thermal Interface Materials – State-of-the-Art and Application Prospects IEEE Open J. Nanotechnol. Pub Date : 2022-11-18 Sriharsha Sudhindra, Lokesh Ramesh, Alexander A. Balandin
We provide a summary of the fundamentals of thermal management, outline the state-of-the-art in the field of thermal interface materials, and describe recent developments in graphene-based non-curing and curing composites used for thermal management. The discovery of unique heat conduction properties of graphene and few-layer graphene motivated research activities worldwide focused on creating efficient
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Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications IEEE Open J. Nanotechnol. Pub Date : 2022-11-18 M. Sankush Krishna, Sangeeta Singh, Brajesh Kumar Kaushik
The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being
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Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering: Optical, Electrical Properties and Thin-Film-Transistor Characteristics IEEE Open J. Nanotechnol. Pub Date : 2022-11-17 Hisato Yabuta, Naho Itagaki, Toshikazu Ekino, Yuzo Shigesato
We report on optical and electrical properties of amorphous In-Ga-Mg-O (a-IGMO) films and characteristics of a-IGMO channel thin-film transistors which went through the reductive post-annealing process. Optical band-gap energies of a-IGMO films were larger than that of amorphous In-Ga-Zn-O (a-IGZO) films. Carrier density and Hall mobility of a-IGMO films with the reductive post-annealing were almost
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Indefinite Admittance Matrix Based Modelling of PSIJ in Nano-Scale CMOS I/O Drivers IEEE Open J. Nanotechnol. Pub Date : 2022-11-14 Vijender Kumar Sharma, Jai Narayan Tripathi, Hitesh Shrimali
The past decade has witnessed a tremendous reduction in the feature size from the deep-submicron to the advanced nano-scale CMOS devices. In nanoscale devices based high-speed systems, the budgeting of jitter due to supply fluctuations is one of the major performance bottlenecks while designing integrated circuits (ICs). In this paper, an accurate and efficient method to analyse power supply induced
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Performance Analysis of Bump in Tapered TSV: Impact on Crosstalk and Power Loss IEEE Open J. Nanotechnol. Pub Date : 2022-11-14 Shivangi Chandrakar, Deepika Gupta, Manoj Kumar Majumder, Brajesh Kumar Kaushik
This study addresses the first feasible, and comprehensive approach to demonstrate a compact resistance-inductance-capacitance-conductance ( RLCG ) model for a multi-walled carbon nanotube bundle (MWB) and multilayered graphene nanoribbon (MLGNR) based tapered through silicon via ( T -TSV) along with the different shaped bumps. The physical structures of bumps accurately considered the effect of the
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Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering IEEE Open J. Nanotechnol. Pub Date : 2022-11-11 Giichiro Uchida, Kenta Nagai, Ayaka Wakana, Yumiko Ikebe
We fabricated nanocrystalline Ge films using radio-frequency (RF) magnetron plasma sputtering deposition under a high Ar-gas pressure. The Ge nanograins changed from amorphous to crystalline when the distance between the Ge sputtering target and the substrate was decreased to 5 mm and the RF input power was 11.8 W/cm 2 (60 W), where the deposition rate was as high as 660 nm/min. In addition, the size
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Modeling and Analysis of Cu-Carbon Nanotube Composites for Sub-Threshold Interconnects IEEE Open J. Nanotechnol. Pub Date : 2022-11-10 Ashish Singh, Brajesh Kumar Kaushik, Rohit Dhiman
The sub-threshold regime is suited for applications requiring ultra-low power consumption with low to medium frequency (tens to hundreds of MHz) of operation. Therefore, this paper presents electrical modeling and comprehensive analysis of copper-carbon nanotube (Cu-CNT) composite interconnects for sub-threshold circuit design. At lower operating frequencies, the effective complex conductivity of Cu-CNT
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Biodegradable and Nanocomposite Materials as Printed Circuit Substrates: A Mini-Review IEEE Open J. Nanotechnol. Pub Date : 2022-11-10 Attila Géczy, Csaba Farkas, Rebeka Kovács, Denis Froš, Petr Veselý, Attila Bonyár
Biodegradables are a promising path for the future of electronics in a greener mindset. The review study focuses on their applications and past and current research results. The paper also investigates the application of nanomaterials as fillers to control or increase the physical (electrical, mechanical, thermal) properties of biodegradable biopolymers. These biodegradables and nanocomposites are
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Recent Advances in Materials, Designs and Applications of Skin Electronics IEEE Open J. Nanotechnol. Pub Date : 2022-11-02 Kuanming Yao, Yawen Yang, Pengcheng Wu, Guangyao Zhao, Lidai Wang, Xinge Yu
As electronic devices get smaller, more portable, and smarter, a new approach of realizing electronics in thin, soft, and even stretchable style that could be worn and attached to the skin, which is called skin electronics, has emerged and attracted much attention. To achieve well compliance, extend the maximum stretchability, promote the comfortability of wearing, and make the most use of the skin
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Emerging Plasma Nanotechnology IEEE Open J. Nanotechnol. Pub Date : 2022-10-28 Seiji Samukawa
Developments in plasma process technology have led to innovative advances in the miniaturization and integration of semiconductor devices. However, when semiconductor devices are utilized in the nanoscale domain, defects or damage related to charged particles and ultraviolet (UV) rays emitted from the plasma can emerge, resulting in degraded characteristics for nano-devices. It is thus imperative to
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Nanofiber-Textured Organic Semiconductor Films for Field-Effect Ammonia Sensors IEEE Open J. Nanotechnol. Pub Date : 2022-10-26 Yao Tang, Qing Ma, Jie Lu, Xingyu Jiang, Lizhen Huang, Lifeng Chi, Litao Sun, Binghao Wang
Field-effect gas sensors, integrating the gas sensor and amplification transistor, exhibit excellent sensory performance. Here we report organic thin-film transistors (OTFTs) with nanofiber-textured semiconductor films that exhibit superior ammonia response compared to conventional OTFTs with uniform/flat semiconductor films. The introduce of insulating polymer additives (IPAs) facilitates the formation
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Single DNA Translocation and Electrical Characterization Based on Atomic Force Microscopy and Nanoelectrodes IEEE Open J. Nanotechnol. Pub Date : 2022-10-25 Bo Ma, Jin-Woo Kim, Steve Tung
Precision DNA translocation control is critical for achieving high accuracy in single molecule-based DNA sequencing. In this report, we describe an atomic force microscopy (AFM) based method to linearize a double-stranded DNA strand during the translocation process and characterize the electrical properties of the moving DNA using a platinum (Pt) nanoelectrode gap. In this method, λDNAs were first
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Integrated Sensing Arrays Based on Organic Electrochemical Transistors IEEE Open J. Nanotechnol. Pub Date : 2022-10-17 Jinjie Wen, Jie Xu, Wei Huang, Cong Chen, Libing Bai, Yuhua Cheng
Organic electrochemical transistors (OECTs), as one of the most promising sensing techniques, have shown various advantages compared to traditional means, which include ultra-high sensitivity, low driving voltage, and excellent biocompatibility for different bioelectrical and biochemical sensing. Moreover, to fully unleash the potential of OECT sensors, integrated sensing systems, especially OECT-based
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Plasma Synthesis of Silicon Nanoparticles: From Molecules to Clusters and Nanoparticle Growth IEEE Open J. Nanotechnol. Pub Date : 2022-09-28 Shota Nunomura, Kunihiro Kamataki, Takehiko Nagai, Tatsuya Misawa, Shinji Kawai, Kosuke Takenaka, Giichiro Uchida, Kazunori Koga
Plasma nanotechnology is widely used for nanoscale etching, dopant implantation and thin-film deposition for state-of-the-art semiconductor devices. Such a plasma nanotechnology has another interesting aspect of synthesizing nanoparticles, in a controlled manner of atomic composition, structure and those size. Here, we present the polymerization and growth of silicon nanoparticles from a molecular
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Hybrid Spintronics/CMOS Logic Circuits Using All-Optical-Enabled Magnetic Tunnel Junction IEEE Open J. Nanotechnol. Pub Date : 2022-07-06 Surya Narain Dikshit, Arshid Nisar, Seema Dhull, Namita Bindal, Brajesh Kumar Kaushik
Spintronics is one of the emerging fields for next-generation low power, high endurance, non-volatile, and area efficient memory technology. Spin torque transfer (STT), spin orbit torque (SOT), and electric field assisted switching mechanisms have been used to switch magnetization in various spintronic devices. However, their operation speed is fundamentally limited by the spin precession time that
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Novel Radiation Hardened SOT-MRAM Read Circuit for Multi-Node Upset Tolerance IEEE Open J. Nanotechnol. Pub Date : 2022-06-08 Alok Kumar Shukla, Seema Dhull, Arshid Nisar, Sandeep Soni, Namita Bindal, Brajesh Kumar Kaushik
The rapid transistor scaling and threshold voltage reduction pose several challenges such as high leakage current and reliability issues. These challenges also make VLSI circuits more susceptible to soft-errors, particularly when subjected to harsh environmental conditions. Hybrid spintronic/CMOS technology has emerged as one of the promising techniques to achieve low leakage power and non-volatility
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Quantum Computing: Fundamentals, Implementations and Applications IEEE Open J. Nanotechnol. Pub Date : 2022-05-27 Hilal Ahmad Bhat, Farooq Ahmad Khanday, Brajesh Kumar Kaushik, Faisal Bashir, Khurshed Ahmad Shah
Quantum Computing is a technology, which promises to overcome the drawbacks of conventional CMOS technology for high density and high performance applications. Its potential to revolutionize today's computing world is attracting more and more researchers towards this field. However, due to the involvement of quantum properties, many beginners find it difficult to follow the field. Therefore, in this
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Area Efficient Computing-in-Memory Architecture Using STT/SOT Hybrid Three Level Cell IEEE Open J. Nanotechnol. Pub Date : 2022-04-12 Seema Dhull, Arshid Nisar, Rakesh Bhat, Brajesh Kumar Kaushik
Spintronic-based computing-in-memory (CiM) architecture has emerged as one of the efficient solutions to counter the latency/bandwidth bottleneck of conventional von-Neumann architecture. However, computation within a small area while achieving low power consumption still remains a challenge. Multi-bit spintronic storage device is a suitable solution to improve the integration density of such architectures
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Embedded-Component Planar Fan-Out Packaging for Biophotonic Applications IEEE Open J. Nanotechnol. Pub Date : 2022-03-30 Akeeb Hassan, Sepehr Soroushiani, Abdulhameed Abdal, Sk Yeahia Been Sayeed, Wei-Chiang Lin, Markondeya Raj Pulugurtha
Embedded-chip planar silver-elastomer interconnect technology is developed with flexible substrates and demonstrated for on-skin biophotonic sensor applications. This approach has several benefits and is also consistent with chip-thinning where the chip thickness is 100 microns and less. The key benefits from this approach arise because both the bottom and top sides are now available as flat surfaces
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Low-Power Approximate RPR Scheme for Unsigned Integer Arithmetic Computation IEEE Open J. Nanotechnol. Pub Date : 2022-02-23 Ke Chen, Weiqiang Liu, Ahmed Louri, Fabrizio Lombardi
A scheme often used for error tolerance of arithmetic circuits is the so-called Reduced Precision Redundancy (RPR). Rather than replicating multiple times the entire module, RPR uses reduced precision (inexact) copies to significantly reduce the redundancy overhead, while still being able to correct the largest errors. This paper focuses on the low-power operation for RPR; a new scheme is proposed
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Instructions for Authors IEEE Open J. Nanotechnol. Pub Date : 2022-01-28
Provides instructions and guidelines to prospective authors who wish to submit manuscripts.
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Transient Analysis of Hybrid Cu-CNT On-Chip Interconnects Using MRA Technique IEEE Open J. Nanotechnol. Pub Date : 2021-12-24 Amit Kumar, Brajesh Kumar Kaushik
This paper presents the transient analysis of the equivalent single conductor (ESC) model of hybrid Cu-CNT on-chip interconnects for nanopackaging using matrix rational approximation (MRA) modeling technique. The analysis of propagation delay and peak crosstalk noise is carried out for single and coupled Cu-CNT interconnect lines at 14 nm and 22 nm technology nodes. It has been observed that the proposed
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Carbon-Based THz Microstrip Antenna Design: A Review IEEE Open J. Nanotechnol. Pub Date : 2021-12-15 Guanxuan Lu, Jiaqi Wang, Zhemiao Xie, John T. W. Yeow
Increasing demands for high-speed wireless communication have stimulated the development of novel optoelectrical devices. Typically, terahertz (THz) wave, is much advantageous because of its relatively high-resolution transportation and strong penetrability property. One of the electromagnetic devices, the antenna, plays a key role in future THz devices. However, there are few review publishments related
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Single-Rail Adiabatic Logic for Energy-Efficient and CPA-Resistant Cryptographic Circuit in Low-Frequency Medical Devices IEEE Open J. Nanotechnol. Pub Date : 2021-12-14 Amit Degada, Himanshu Thapliyal
Designing energy-efficient and secure cryptographic circuits in low-frequency medical devices are challenging due to low-energy requirements. Also, the conventional CMOS logic-based cryptographic circuits solutions in medical devices can be vulnerable to side-channel attacks (e.g. correlation power analysis (CPA)). In this article, we explored single-rail Clocked CMOS Adiabatic Logic (CCAL) to design
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Frontcover IEEE Open J. Nanotechnol. Pub Date : 2021-12-28
Presents the front cover for this issue of the publication.
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Instructions for Authors IEEE Open J. Nanotechnol. Pub Date : 2021-12-28
Provides instructions and guidelines to prospective authors who wish to submit manuscripts.