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MIM Waveguide Based Multi-functional Plasmonic Logic Device by Phase Modulation IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-04-18 Lokendra Singh, Prakash Pareek, Chinmoy Saha, Vigneswaran Dharsthanan, Niteshkumar Agrawal, Roshan Kumar
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Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-04-18 Sekhar Reddy Kola, Yiming Li, Rajat Butola
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Silicon-Germanium Ultrashort-Gate Transistor Performances by Electrical-Thermal Simulations IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-04-16 Shiun Yamakiri, Takaya Sugiura, Kenta Yamamura, Yuta Watanabe, Nobuhiko Nakano
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21T Ternary Full Adder Based on Capacitive Threshold Logic and Carbon Nanotube FETs IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-04-10 Marzieh Hashemipour, Reza Faghih Mirzaee, Keivan Navi
The reduction in transistor count has long been a big challenge and an ongoing objective in the design of Ternary Full Adders (TFAs). Capacitive Threshold Logic (CTL) is a well-known logic style requiring a small number of transistors to implement a circuit. This paper presents a novel CTL TFA that utilizes only 21 transistors, three of which function as capacitors. Reducing the number of transistors
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p-WSe2 Nanosheets/ n-WS2 Quantum Dots/p-Si (2D-0D-3D) Mixed-Dimensional Multilayer Heterostructures Based High-Performance Broadband Photodetector IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-04-08 S. Chowdhury, Abhinav Pratap Singh, S. Jit, P. Venkateswaran, D. Somvanshi
In this work, we have investigated the performance of a p-WSe 2 Nanosheets (NSs)/n-WS 2 Quantum dots (QDs)/p-Si (2D-0D-3D) based mixed-dimensional (MD) multilayer heterostructure photodetector with Ag as top contact electrode. The WSe 2 NSs and WS 2 QDs are synthesized by solvothermal and hydrothermal synthesis methods, respectively. The proposed photodetector exhibits a broad photo response over 300
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Levenberg-Marquardt Validation of Multiple Fano Resonances in Plasmonic Cavity for Adrenal/Breast Cancer Detection IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-04-08 Sajjan Kumar Jha, Gaurav Varshney, Rabindra Kumar
A technique of slanting MIM plasmonic waveguide-based cavity is numerically studied and implemented. Initially, the proposed rectangular cavity is proficient for generating five Breit-Wigner and six Fano resonances. The polygonal cavity is designed out of rectangular cavity by slanting one of its edge that reshaped the Breit-Wigner resonances into Fano profile with remaining resonances unaffected.
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Amplitude Modulator Design Using Series Graphene Transmission Lines in Terahertz Frequency Band IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-04-05 Saughar Jarchi
In this paper, a layered transmission line based on graphene is designed and investigated to provide amplitude modulation in the low terahertz frequency band. The proposed primary structure is composed of a graphene transmission line on a dielectric layer, as substrate, loaded by a transverse graphene strip and backed by a continuous graphene sheet, as ground plane. The intermediate graphene strip
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Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog/Radio-Frequency Applications IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-04-04 Tian-Tong Cheng, Qiang Li, Yu-Xi Yang, Zhi-Wei Zheng
As the negative capacitance field-effect transistors (NCFETs) have extensive application prospects and advanced technological support in the analog/radio-frequency (RF) domains, it is important to investigate the theoretical performances of the NCFETs with various feasible structures. In this article, utilizing the TCAD simulation tool and an experimentally calibrated ferroelectric model, we perform
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Graphene Oxide Paper as a Lightweight, Thin, and Controllable Microwave Absorber for Millimeter-Wave Applications IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-04-04 Agata Romanowska, Stefan Marynowicz, Tomasz Strachowski, Konrad Godziszewski, Yevhen Yashchyshyn, Adrian Racki, Magdalena Baran, Tymoteusz Ciuk, Adrian Chlanda
The production and verification of microwave absorbers are a subject of high priority. These are due to the fast development of telecommunication technologies and the need to reduce electromagnetic pollution. Such materials are implementable in multiple industries, including military, medical, and laboratory equipment. One should remember that the desired material should exhibit a high total shielding
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Improved Non-enzymatic Glucose Sensors of ZnO Nanorods by Adsorb Pt Nanoparticles IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-04-01 Yi-Hsing Liu, Sheng-Joue Young, Cheng-Yen Hsien, Yen-Lin Chu, Zi-Hao Wang, Shoou-Jinn Chang
The study proposed simple methods with hydrothermal method and physical vapor deposition coating technique (sputter coater) to prepare Pt nanoparticles attach on ZnO nanorods, and then applied in non-enzymatic glucose sensor. Glucose sensing is tested using electrochemical measurement, including cyclic voltammetry and amperometry method. In cyclic voltammetry measurement, the sensitivity of ZnO and
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Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-25 Yi-Xuan Chen, Yi-Lin Wang, Fu-Jyuan Li, Shu-Jui Chang, Tsung-En Lee, Chao-Ching Cheng, Meng-Chien Lee, Hui-Hsuan Li, Yu-Hsien Lin, Chao-Hsin Chien
In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O 2 plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing ( S.S. ) of 122.5 mV/decade, an I on / I off of around 4.7×10 8 , and
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Biosensor Chip for Point-of-Care Diagnostics: Carbon Nanotube Sensing Platform for Bacterial Detection and Identification IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-22 Rebecca Ho, Samuel Fuller, Hae-Seung Lee, Max M. Shulaker
Emerging technologies, such as carbon nanotubes (CNTs), show exciting benefits for next-generation electronic systems and have recently been incorporated within commercial fabrication facilities and foundries. Here we demonstrate a real-world application of carbon nanotube field-effect transistors (CNFETs) leveraging these foundry capabilities: performing disease diagnostics by detecting and identifying
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Memristor Based Liquid State Machine with Method for In-Situ Training IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-22 Alex Henderson, Chris Yakopcic, Cory Merkel, Hananel Hazan, Steven Harbour, Tarek Taha
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A High-Accuracy and Low-Power Emerging Technology-Based Associative Memory IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-21 Mahan Rezaei, Abdolah Amirany, Mohammad Hossein Moaiyeri, Kian Jafari
Associative memory (AM) is a subcategory of neural networks (NNs) inspired by human memory. Over time, the need to process complex tasks has increased, leading to the development of intelligent processors. Most NN circuits have been implemented using complementary metal-oxide-semiconductor (CMOS) technologies. However, some adverse effects have become more apparent with the scaling of transistors.
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Unveiling the Effect of CZTSSe Quantum Superlattice on the Interfacial and Optical Properties of CZTS Kesterite Solar Cell IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-21 G. S. Sahoo, M. Verma, S. Routray, G. P. Mishra
Research on Cu 2 ZnSnS x Se 4窶度 (CZTSSe) Kesterite solar cells has reached a critical point, despite a significant improvement in understanding of the limitations associated with these materials. However, the conversion efficiency of CZTSSe solar cells has yet to exceed 20%, primarily due to a relatively high voltage deficit compared to other well-established chalcogenide technologies. The primary
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Anti-Parity-Time Symmetry and Non-Reciprocal Transmission in Photonic Dimer IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-18 Bo Lu, Yong-Pan Gao, Lu Liu, Chuan Wang
In this work, the optical properties and dynamical behaviors of the optical parametric oscillation under the anti Parity-Time (anti-PT) symmetry are studied. The non-Hermitian optical system is composed of two whispering-gallery mode micorcavities with one cavity supports the $\chi _{2}$ nonliearity. Compared with the previous non-Hermitian system that relies on optical gain and loss, the proposed
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Biosynthesized AgNP Modified Glassy Carbon Electrode as a Bacteria Sensor Based on Amperometry and Impedance-Based Detection IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-11 Rhea Patel, Naresh Mandal, Bidhan Pramanick
The most effective methods for detecting bacterial cells at different phases of development take a lot of time, require expert labor, and call for state-of-the-art lab setups, including complex equipment and surroundings. Here, using amperometry and non-faradaic electrochemical impedance spectroscopy (nf-EIS) measurements, we have developed a glassy carbon electrode (GCE) derived from carbon-microelectromechanical
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Variability-Aware Memristive Crossbars With ImageSplit Neural Architecture IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-08 Aswani Radhakrishnan, Anitha Gopi, Chithra Reghuvaran, Alex James
The errors in the memristive crossbar arrays due to device variations will impact the overall accuracy of neural networks or in-memory systems developed. For ensuring reliable use of memristive crossbar arrays, variability compensation techniques are essential to be part of the neural network design. In this paper, we present an input regulated variability compensation technique for memristive crossbar
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Numerical Analysis of Annular Photonic Crystal Based Reconfigurable and Multifunctional Nanoring Symmetrical Resonator for Optical Networks IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-05 Pradeep Doss M, R. K. Jeyachitra
Annular photonic crystal-based coupled nano ring resonator for the multifunctional platform with ultra-compact in size for high-performance optical network components. The proposed structure is reconfigurable and symmetrical, providing large bandwidth, high extinction ratio, and a very low loss comprising dual ring resonators and annular photonic crystal ring is made of Silica (Si) filled with Magnesium
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Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-05 Samuel S. H. Ng, Jeremiah Croshaw, Marcel Walter, Robert Wille, Robert Wolkow, Konrad Walus
Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with the availability of SiQAD, a computer-aided design tool designed for this technology. Latest design automation frameworks have enabled the synthesis of
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From Multipliers to Integrators: A Survey of Stochastic Computing Primitives IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-05 Shanshan Liu, Josep L. Rosselló, Siting Liu, Xiaochen Tang, Joan Font-Rosselló, Christian F. Frasser, Weikang Qian, Jie Han, Pedro Reviriego, Fabrizio Lombardi
Stochastic Computing (SC) has the potential to dramatically improve important nanoscale circuit metrics, including area and power dissipation, for implementing complex digital computing systems, such as large neural networks, filters, or decoders, among others. This paper reviews the state-of-the-art design of important SC building blocks covering both arithmetic circuits, including multipliers, adders
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Enhanced Magnetic Field Sensing With MAGNC-FinFET: A Current Mode Hall Effect Approach IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-05 Ravindra Kumar Maurya, Radhe Gobinda Debnath, Rajesh Saha, Brinda Bhowmick
This research paper introduces a novel magnetic sensing device named MAGNC-FinFET, which utilizes the conventional NC-FinFET structure as its foundation. This device is capable of measuring vertical magnetic fields through the incorporation of two contacts positioned on either side of the drain. The operating principle relies on the current mode of the Hall effect, leading to the diversion of drain
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Reverse Charge Injection Dual-Gate Synaptic Transistors for Effective Weight Update IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-29 Donghyun Ryu, Junsu Yu, Woo Young Choi
Reverse charge injection (RCI) dual-gate synaptic transistors and their effective weight update method are proposed. First, the structural features of the proposed RCI dual-gate synaptic transistors are discussed in comparison with our previous work. Second, the weight update efficiency of the proposed synaptic transistors is discussed by analyzing the coupling capacitance components, which determine
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Numerical Investigation of Nanoresonator Based Ultra Narrow-Band Photonic Filters IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-27 R. Rajasekar
A novel photonic crystal nanoresonator-based optical bandpass filter is designed with ultra narrow bandwidth, high quality factor, low optical loss and very small compact size. The proposed S-Shaped nanostructure is playing a very significant role on narrow wavelength filtering and effectively localize the incident light signal which leads to the high-quality factor is obtained with 100% transmission
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Optimization of a Nanoscale Operational Amplifier Based on a Complementary Carbon Nanotube Field-Effect Transistor by Adjusting Physical Parameters IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-27 Hao Ding, Lan Chen, Wentao Huang
Carbon nanotube field-effect transistors (CNFETs) possess high current density and carrier mobility, enabling high intrinsic gains below the 20-nm technology node. Thus, they demonstrate superior performance compared to traditional silicon analog integrated circuits (ICs). Here, the relevant parameters of a CNFET in analog IC designs were analyzed and simulated, elucidating the influence of physical
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Efficient Parallel Stochastic Computing Multiply-Accumulate (MAC) Technique Using Pseudo-Sobol Bit-Streams IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-22 Aokun Hu, Wenjie Li, Dongxu Lyu, Guanghui He
Stochastic computing (SC) has emerged as a promising technique for reducing hardware costs in various applications, particularly in multiply-accumulate (MAC) intensive tasks such as neural networks. However, conventional SC still faces challenges in terms of achieving high accuracy and throughput. To enhance the precision, Sobol bit-stream has been widely adopted in SC. On the other hand, the throughput
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ASIC Design of Nanoscale Artificial Neural Networks for Inference/Training by Floating-Point Arithmetic IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-20 Farzad Niknia, Ziheng Wang, Shanshan Liu, Pedro Reviriego, Ahmed Louri, Fabrizio Lombardi
Inference and on-chip training of Artificial Neural Networks (ANNs) are challenging computational processes for large datasets; hardware implementations are needed to accelerate this computation, while meeting metrics such as operating frequency, power dissipation and accuracy. In this article, a high-performance ASIC-based design is proposed to implement both forward and backward propagations of multi-layer
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On the γ-Radiation Dosimetry Using a Layered Metamaterial Structure Comprising FTO and Blue Glass IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-09 E. M. Sheta, Azrul Azlan Hamzah, Umi Zulaikha Mohd Azmi, Ishak Mansor, Pankaj Kumar Choudhury
A layered metamaterial comprising periodic blue glass and FTO mediums was investigated for gamma (γ) radiation dosimetry. The device acts on the principle of absorption of the incidence radiation with sharp resonance absorption peaks which undergo shifts in the presence of γ-radiation. The more the radiation dose is, the more shift happens in the resonance absorption spectrum – the feature that can
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Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-02 Bowen Wang, Fernando García-Redondo, Marie Garcia Bardon, Hyungrock Oh, Mohit Gupta, Woojin Kim, Diego Favaro, Yukai Chen, Wim Dehaene
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CMOS-RRAM Based Non-Volatile Ternary Content Addressable Memory (nvTCAM) IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-30 Manoj Kumar, Ming-Hung Wu, Tuo-Hung Hou, Manan Suri
We propose a Non-Volatile Ternary Content Addressable Memory (nvTCAM) by utilizing two Resistive Random-Access Memory (RRAM) cells integrated with individual selector transistors (i.e., 2-Transistor, 2-RRAM). A 2T2R cell configured either in complementary resistive switching mode (i.e., if one 1T1R cell is in low resistance state then the other cell will be in high resistance state or vice-versa) or
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Experimental Evaluation of Tailored Double Heterojunction Non-Toxic Metal Oxide-Based Nanostructured Sensor for Multi-Sensing Application IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-29 Binowesley R, Kirubaveni Savarimuthu, Kiruthika Ramany, Govindaraj Rajamanickam
A systematized experimental interpretation of BaTiO 3 (B), ZnO (Z), and BaTiO 3 /ZnO (B/Z) based sensors, fabricated via a facile solution-based method is reported. The structural properties analysis of all the sensors fabricated reveals the formation of characteristic respective dominant peaks (hexagonal, tetragonal, and heterostructure (hexagonal and tetragonal) for B, Z, and B/Z respectively). The
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Low-Cost and Highly-Efficient Bit-Stream Generator for Stochastic Computing Division IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-26 Mehran Shoushtari Moghadam, Sercan Aygun, Sina Asadi, M. Hassan Najafi
Stochastic computing (SC) division circuits have gained importance in recent years compared to other arithmetic circuits due to their low complexity as a result of an accuracy tradeoff. Designing a division circuit is already complex in conventional binary-based hardware systems. Developing an accurate and efficient SC division circuit is an open research problem. Prior work proposed different SC division
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A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-26 Xingyu Zhai, Yun Li, Wen-Yan Yin, Shuo Zhang, Wenxuan Zang, Yanbin Yang, Hao Xie, Wenchao Chen
Resistive random access memory (RRAM) with edge-contacted graphene electrode has much lower power consumption and excellent scalability as in other's previous studies, which shows great potential for in-memory computing, neuromorphic integrated circuits, Big Data analytics, etc. A physics-based SPICE compact model of RRAM with graphene electrode is proposed to capture the electro-thermal characteristics
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DFT Calculations for Temperature Stable Quantum Capacitance of VS2 Based Electrodes for Supercapacitors IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-24 Ashish Kumar Yadav, Shreevathsa N S, Rohit Singh, Partha Pratim Das, Vivek Garg, Sushil Kumar Pandey
Using density functional theory calculations, we demonstrate the quantum capacitance of the VS 2 electrode which can be improved by doping with non-metallic elements such as nitrogen (N), phosphorus (P), and arsenic (As) atoms. The radius, charge, and morphology of these non-metallic elements help to improve the performance of VS 2 material as electrodes of supercapacitors. The As-doped VS 2 monolayer
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NeuroSOFM-Classifier: Nanoscale FeFETs Based Low Power Neuromorphic Architecture for Classification Using Continuous Real-Time Unsupervised Clustering IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-23 Siddharth Barve, Rashmi Jha
Supervised machine learning techniques are becoming subject of significant interest in data analysis. However, the high memory bandwidth requirement of current implementations, scarcity of labeled data, and dynamic environments in many applications prevent implementation of supervised machine learning techniques. In this work, we propose a neuromorphic architecture implementing the self-organizing
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Ab-Initio Investigations into Frenkel Defects in Hexagonal Boron Nitride for Quantum Optoelectronic Applications IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-16 Sunny Kumar, Vikash Mishra, Kolla Lakshmi Ganapathi, Muralidhar Miryala, M. S. Ramachandra Rao, Tejendra Dixit
The van Der Waals material, hexagonal boron nitride (h-BN) is being studied extensively for electronics, sensing, photonics, and quantum technology. Identifying distinct point-defects that may be employed to create qubits and single photon emitters with specific properties has recently boosted defect engineering research in h-BN. The assignment of defects to specific characteristics of h-BN is a subject
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2023 Index IEEE Transactions on Nanotechnology Vol. 22 IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-15
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Broadband Graphene/TiO2 Optical Modulator Based on Hybrid Plasmonic Waveguide for Ultrafast Switching and Low-Voltage State IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-15 Wisut Supasai, Suksan Suwanarat, Mongkol Wannaprapa, Papichaya Chaisakul, Apirat Siritaratiwat, Chavis Srichan, Nuttachai Jutong, Sorawit Narkglom, Chayada Surawanitkun
This work presents a novel contribution to graphene/TiO 2 electro-optical modulators based on silicon-on-silica waveguide with a hybrid plasmonic waveguide to achieve ultrafast switching and low-voltage states. Waveguide structure consists of a rectangular silicon core covered by a high relative permittivity TiO 2 dielectric layer with two layers of graphene, air-clad, and silica lower cladding. Effective
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Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-12 Jaafar Abdulkareem Mustafa Alsmael, Serhat Orkun Tan
In this work, Al/p-Si structures with (ZnFe 2 O 4 − PVA) interfacial film, which is grown by the electrospinning-method, have been analyzed by using impedance measurements in the wide frequency interval (2 kHz–2 MHz) at both side of polarization (±4 V). Some fundamental important electrical parameters such as intercept-voltage (V o ), the concentration of acceptor-atoms (N A ), depletion layer width
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MoS2 Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-29 Sahil Garg, Bhavuk Sharma, Gaurav Mani Khanal, Sanjeev Kumar, Neena Gupta, S. R. Kasjoo, Aimin Song, Arun K. Singh
This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I-V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple
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Impact of Dynamic Tip-Surface Interactions on Microdroplet Formation via Fluid Force Microscopy IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-26 Zhuobo Yang, Xianmin Zhang, Hai Li, Benliang Zhu, Ke Feng, Rixin Wang
The emergence of FluidFM technology has presented a novel opportunity for selective aspiration and distribution of liquids at the sub-micron scale. However, precise control over droplet generation volume remains a challenging issue. This study investigates the impact of dynamic parameters between the tip and surface on droplet formation. Initially, we establish a finite element model to simulate the
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Adaptive Controller With Anti-Windup Compensator for Piezoelectric Micro Actuating Systems IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-25 Ying Feng, Mingwei Liang, Ying Li
In this study, the control approach for the piezoelectric actuating system under broad ranges frequency is designed. Addressing the frequency dependent property (rate-dependent) hysteresis of the input signal in piezoelectric actuators, a phenomenological model, a rate-dependent Prandtl-Ishlinskii (RDPI) model, has been utilized to predict the output actuating ability of piezoelectric actuators. Considering
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Memristive Circuit Design of Associative Memory With Generalization and Differentiation IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-25 Juntao Han, Xin Cheng, Guangjun Xie, Junwei Sun, Gang Liu, Zhang Zhang
Reinforcement, extinction, generalization and differentiation are all basic principles of Pavlov associative memory. Most memristive neural networks that simulate associative memory only consider reinforcement and extinction, while ignoring differentiation and generalization. In this paper, a memristive circuit of associative memory with generalization and differentiation is proposed to solve the above
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Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-25 Amir Khodabakhsh, Amir Amini, Mohammad Fallahnejad
The evolution trend of wireless communication systems tends to ultra-high data rate, ultra-low latency, and high bandwidth systems. It is foreseen that 6G wireless communication systems will be developed in the range of 100–300 GHz (upper mmWave band) and 300–3000 GHz (terahertz band). In such frequencies, the performance of junctionless field effective transistors is limited due to the reduction of
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Design and Evaluation of Graphene-Silicon Heterojunction LEDs for Breast Cancer Detection IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-25 Chiranjib Bhowmick, Sharique Ali Asghar, Pranab Kumar Dutta, Manjunatha Mahadevappa
Breast Cancer remains a devastating affliction for humanity, particularly due to its low survival rates, especially when detected at advanced stages and metastasis has occurred. Early diagnosis is crucial to increase survival rates, but current diagnostic techniques such as mammography and MRI are costly and require an experienced radiologist to interpret results. Transillumination is a non-invasive
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Highly Reliable, Stable, and Store Energy Efficient 8T/9T-2D-2MTJ NVSRAMs IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-21 Sandeep Tripathi, Sudhanshu Choudhary, Prasanna Kumar Misra
Non-Volatile SRAMs exhibit zero static power loss which is eminent for future on-chip memories. Thus, in this brief, two simple and scalable designs of NVSRAM (8T&9T-2D-2MTJ) having key properties (high speed, low dynamic power, stability and reliability) have been investigated. To make the circuit scalable, the perpendicular magneto anisotropy (PMA) based magnetic tunnel junction (MTJ) (works on the
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A STT-Assisted SOT MRAM-Based In-Memory Booth Multiplier for Neural Network Applications IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-18 Jiayao Wu, Yijiao Wang, Pengxu Wang, Yiming Wang, Weisheng Zhao
Computing-in-memory (CIM) is a promising candidate for highly energy-efficient neural networks, alleviating the well-known bottleneck in Von Neumann architecture. MRAM has garnered significant attention in the CIM field, providing advantages in terms of non-volatility, high speed, and endurance. However, most existing MRAM-CIM primarily support low-precision operations, which poses a challenge in fulfilling
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Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-18 Harrison Jin, Hanqing Zhu, Keren Zhu, Thomas Leonard, Jaesuk Kwon, Mahshid Alamdar, Kwangseok Kim, Jungsik Park, Naoki Hase, David Z. Pan, Jean Anne C. Incorvia
With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conversion. Analog content-addressable memories (ACAM) are being recently studied for in-memory computing to efficiently convert between analog and digital signals. Magnetic memory elements such as magnetic tunnel junctions (MTJs) could be useful for ACAM
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High Speed Binary Neural Network Hardware Accelerator Relied on Optical NEMS IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-15 Yashar Gholami, Fahimeh Marvi, Romina Ghorbanloo, Mohammad Reza Eslami, Kian Jafari
In this article, an electrostatically-actuated NEMS XOR gate is proposed based on photonic crystals for hardware implementation of binary neural networks. The device includes a 2D photonic crystal which is set on a movable electrode to implement the XOR logic using the transmission of specific wavelengths to the output. This design represents the importance of the proposed structure in which the logic
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On the Commutative Operation of Approximate CMOS Ripple Carry Adders (RCAs) IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-14 Junqi Huang, T. Nandha Kumar, Haider A. F. Almurib, Fabrizio Lombardi
Approximate cells can be used to design Ripple Carry Adders (RCAs) for realizing approximate addition in energy-efficient CMOS digital circuits. As inputs of approximate cells could be non-commutative in nature, approximate adders may show different output values under a commutative operation, and this may have a significant effect on the generated sum. This paper presents a detailed analysis of the
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Modeling and Simulation of RRAM With Carbon Nanotube Electrode IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-12 Da-Wei Wang, Jia-He Zhu, Yi-Fan Liu, Gaofeng Wang, Wen-Sheng Zhao
The resistive random access memory with metallic carbon nanotube (CNT-RRAM) electrode possesses low power consumption and low junction temperature. In this work, both physical and compact models describing the operations of CNT-RRAM at the microscopic level are presented. In the physics-based model, the migration of oxygen vacancies is described by fully coupled oxygen transport, current continuity
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Performance Optimization for Ferroelectric HfZrOx on a Ge Substrate by Modifying the Deposition Temperature IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-04 Shuxian Lyu, Pengfei Jiang, Zhaomeng Gao, Yang Yang, Yuanxiang Chen, Boping Wang, Meiwen Chen, Yuan Wang, Yuting Chen, Yan Wang
Hafnia ferroelectric-based Fe-FET devices have attracted increasing interest due to their CMOS compatibility, high scalability and low power consumption. Ge-based Fe-FETs could help overcome the shortcomings of Si-based Fe-FETs caused by the interface layer. In this work, the effect of the deposition temperature on the TiN/Hf 0.5 Zr 0.5 O 2 /Ge device performance is systematically studied, which is
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High-Performance STT-MRAM-Based Computing-in-Memory Scheme Utilizing Data Read Feature IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-27 Bi Wu, Kai Liu, Tianyang Yu, Haonan Zhu, Ke Chen, Chenggang Yan, Erya Deng, Weiqiang Liu
With the development of Artificial Intelligence (AI) and Binary neural networks (BNN), the computing efficiency of the computing system is expected to be much better, however, enormous amounts of data processing have caused an intolerable ‘memory wall’ and ‘power wall’ challenge for traditional Von Neumann architectures. Therefore, more advanced Computing-in-memory (CiM) architectures are proposed
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Effect of Adsorption Mechanism on Conduction in Single-Molecule Pyrrole-Based Sensor for AFB1 IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-24 Fabrizio Mo, Yuri Ardesi, Chiara Elfi Spano, Massimo Ruo Roch, Gianluca Piccinini, Mariagrazia Graziano
We investigate through ab-initio simulations the gold-8PyrroleDiThiol-gold (Au-8PyDT) molecular quantum dot as an amperometric single-molecule sensor for the aflatoxin B1 (AFB1) detection. We study the chemical-physical interaction of AFB1 with the Au-8PyDT, and we analyze the transport characteristics of the four most probable adsorption configurations. We also investigate the link between transport
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Performance Evaluation of a Fractal Plasmonic Bowtie Nano-Antenna: Optical and Far-Field Properties IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-15 Somayeh Komeylian, Christopher Paolini
In the nano-antenna framework, in this work, we have proposed a fractal plasmonic bowtie nano-antenna (FPBNA) with three wings to maximize the coupling between higher and lower order modes. Hollow cavities of the bowtie nano-antenna support hybridization modes, both anti-bonding and bonding modes. In other words, the blue-shift in the hybridization modes results from an increase in the Sierpiński fractal
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Dynamical Neural Network Based on Spin Transfer Nano-Oscillators IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-10 Davi R. Rodrigues, Eleonora Raimondo, Vito Puliafito, Rayan Moukhadder, Bruno Azzerboni, Abbass Hamadeh, Philipp Pirro, Mario Carpentieri, Giovanni Finocchio
Spintronic technology promises to significantly increase the efficiency and scalability of neural networks by employing optimized task-oriented device components that exhibit intrinsic nonlinearity, temporal nonlocality, scalability, and electrical tunability. In particular, the functional response of spin-transfer torque oscillators can be designed to naturally emulate the building blocks of neural
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Amplification and Frequency Conversion of Spin Waves Using Acoustic Waves IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-09 Morteza Mohseni, Alexandre Abbass Hamadeh, Moritz Geilen, Philipp Pirro
We numerically study the acoustic parametric amplification of spin waves using surface acoustic waves (SAW) in a magnetic thin film. First, we illustrate how the process of parametric spin-wave generation using short-waved SAWs with a fixed frequency allows to tune frequencies of the generated spin waves by the applied magnetic field. We further present the amplification of microwave driven spin waves
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2D Material-Based MVS Model and Circuit Performance Analysis for GeH Field-Effect Transistors IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-06 Yiju Zhao, Youngki Yoon, Lan Wei
This paper presents an improved multi-level simulation framework for 2D material-based nanoelectronics, which expands from device simulation, physics-based compact modeling, and circuit benchmarking, using the germanane (GeH) metal-oxide-semiconductor field-effect transistors (MOSFETs) as an example. The device simulation employs the non-equilibrium Green's function method to obtain the characteristics
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Monte Carlo Modeling of Growth Delay in Atomic Layer Deposited WS2 on SiO2 Substrate Based on Kinetic Extrapolation of Reaction Entropy and Enthalpy IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-02 Komal Mishra, Vivek Kumar, Arnab Datta
Atomic layer deposition (ALD) of tungsten-disulfide (WS 2 ) on silicon-dioxide (SiO 2 ) substrate had been modelled using a kinetic Monte Carlo (KMC) method which considered kinetic extrapolation of reaction entropy and enthalpy between the two proposed reaction limits that define possible initial and final phases of the WS 2 ALD reaction, and stochastic adsorption or desorption of molecules was calculated
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Effect of High–Temperature Annealing on Au Thin Film/TiO2 Nanowires for Enhanced Photodetection IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-31 Rajib Kumar Nanda, Amitabha Nath, Laishram Robindro Singh, Mitra Barun Sarkar
Glancing angle deposition (GLAD) technique has been carried out to deposit the titanium dioxide (TiO 2 ) nanowires (NW) on the silicon (Si) substrate. The TiO 2 NW is coated with a gold (Au) thin film (TF) and annealed at a very high temperature. The morphological characteristics have been reported using field emission scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy